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SI7232DN-T1-GE3
+NomenclatureMOSFET 2N-CH 20V 25A PPAK 1212-8
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FabricantSiliconix
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Pièce fabricant #SI7232DN-T1-GE3
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Fiche technique SI7232DN-T1-GE3 DataSheet
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Package PowerPAK® 1212-8 Dual
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En stock3228
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 25A |
| RdsOn(Max)@IdVgs | 16.4mOhm @ 10A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 32nC @ 8V |
| InputCapacitance(Ciss)(Max)@Vds | 1220pF @ 10V |
| Power-Max | 23W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® 1212-8 Dual |
Présentation
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 20A, making it suitable for moderate power applications. The device is housed in a PowerPAK 1212-8 package, ensuring efficient thermal management and compact design for space-constrained applications. It also supports logic-level gate drive, making it compatible with lower voltage drive signals from microcontrollers.
The SI7232DN-T1-GE3 is widely used in DC-DC converters, synchronous rectification, and power supply circuits. Its high efficiency and reliability make it an ideal choice for automotive, industrial, and consumer electronics applications requiring robust power management solutions.
Equivalent
- NXP PSMN1R0-30PL
- Infineon BSC059N06NS
- ON Semiconductor NTMFS5C628NL.
These equivalents should have similar voltage, current ratings, and package types, but always verify specific electrical characteristics and package compatibility with your application requirements.
Features
1. N-Channel MOSFET: This device is built on an N-channel technology, allowing it to conduct current when a positive voltage is applied to the gate.
2. Low On-Resistance: It offers very low on-resistance, which minimizes conduction losses and improves efficiency in power conversion applications.
3. Compact Package: The MOSFET is housed in a PowerPAK® 1212-8 package, providing a compact footprint that is suitable for space-constrained applications.
4. High Power Handling: It is designed to handle significant power loads, making it suitable for a wide range of high-power applications.
5. Fast Switching Speed: The device supports rapid switching speeds, which is ideal for high-frequency applications such as DC-DC converters.
6. Thermal Performance: It provides good thermal performance, helping dissipate heat effectively during operation.
These features make the SI7232DN-T1-GE3 ideal for use in applications requiring efficient power management, such as power supplies and motor control circuits.
Pinout
In terms of pin count and function:
- Pin 1 and 2: Source (S)
- Pin 3: Gate (G)
- Pin 4 and 5: Drain (D)
- Pin 6, 7, and 8: Source (S)
The PowerPAK® SO-8 package usually has the drain connected to the exposed pad for better thermal performance. This configuration allows for efficient heat dissipation and is suitable for high-current applications. Please refer to the manufacturer's datasheet for precise pin configuration and detailed specifications.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation modules due to its efficient power handling capabilities.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics due to its low on-resistance.
3. Switching Applications: Ideal for high-frequency switching in power supplies and battery management systems.
4. Load Switching: Employed in load switch circuits for its fast switching speed.
5. Automotive Systems: Used in automotive power systems for its reliability and robustness.
These applications leverage the MOSFET's efficiency, thermal performance, and compact design.