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SPD07N60C3
+NomenclatureMOSFET N-CH 600V 7.3A TO252-3
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FabricantTechnologie Infineon
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Pièce fabricant #SPD07N60C3
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Package TO-252-3
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En stock1733
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Spécifications
| Attribut | Valeur |
| Package / Case | Bulk |
| Series | CoolMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 7.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 600mOhm @ 4.6A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 350µA |
| Gate Charge(Qg)(Max) @ Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 790 pF @ 25 V |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
Présentation
Description
Key attributes include low on-resistance, which reduces power losses and improves efficiency, and a fast switching speed, making it ideal for use in switching power supplies, LED drivers, and other high-frequency circuits. The SPD07N60C3 typically comes in a TO-220 package, which provides a robust physical form factor that can handle significant heat dissipation, although other package options may also exist.
The device is noted for its robust performance under demanding conditions, offering a good balance between cost and efficiency for manufacturers looking to optimize power conversion systems.
Equivalent
1. STP7NK60Z by STMicroelectronics
2. IRF740 by Infineon Technologies
3. FQP7N60C by ON Semiconductor
4. TK8A60D by Toshiba
These alternatives share similar voltage and current ratings but always verify the specifications and pin configurations to ensure compatibility with your application.
Features
1. Voltage and Current Ratings: It offers a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A, making it suitable for high-voltage applications.
2. Low On-State Resistance: It features a low R_DS(on) value, which minimizes conduction losses and improves efficiency, especially in switching applications.
3. Fast Switching Speed: The MOSFET is designed for fast switching, reducing energy loss during transitions and enhancing overall system efficiency.
4. CoolMOS™ Technology: It incorporates Infineon's CoolMOS™ technology, delivering superior thermal performance and enabling higher power density designs.
5. High Avalanche Ruggedness: The device is robust against voltage spikes and surges, ensuring reliability and longevity in demanding environments.
6. TO-220 Package: It comes in a TO-220 package, facilitating easy mounting and heat dissipation.
These features make the SPD07N60C3 ideal for applications such as power supplies, motor drives, and other industrial and consumer electronics requiring high efficiency and reliability.
Pinout
- Gate (G): This pin controls the MOSFET's operation. A voltage applied here allows current to flow between the Drain and Source.
- Drain (D): This is the pin where the main current enters the MOSFET.
- Source (S): This is the pin where the main current exits the MOSFET.
The SPD07N60C3 is designed for high-efficiency power conversion applications, providing low on-state resistance and fast switching capabilities, which make it suitable for use in switching power supplies and other high-frequency circuits.
Manufacturer
Application
1. Switched-Mode Power Supplies (SMPS): Utilized for efficient power conversion in chargers and adapters.
2. Motor Drives: Employed in motor control systems for improved performance and energy savings.
3. Lighting Systems: Ideal for LED drivers and lighting ballasts due to its low power loss.
4. Renewable Energy Systems: Used in solar inverters for converting DC to AC efficiently.
5. Industrial Applications: Suitable for industrial power control and management systems.
These applications benefit from the MOSFET’s low on-state resistance and high-speed switching capabilities, enhancing overall system efficiency.