BSP149H6327XTSA1

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BSP149H6327XTSA1

+Nomenclature

MOSFET N-CH 200V 660MA SOT223-4

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series SIPMOS®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 660mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 0V, 10V
RdsOn(Max)@IdVgs 1.8Ohm @ 660mA, 10V
Vgs(th)(Max)@Id 1V @ 400µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 430 pF @ 25 V
FETFeature Depletion Mode
PowerDissipation(Max) 1.8W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-SOT223-4

Présentation

Description

The BSP149H6327XTSA1 is a part of Infineon's product lineup, specifically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This component is designed for use in power management applications, offering efficient switching performance. Key features typically include low on-resistance, fast switching speed, and high energy efficiency, making it suitable for various applications such as DC-DC converters, motor control, and other power devices.
This MOSFET is built using advanced semiconductor technology to provide enhanced performance in terms of thermal management and electrical characteristics. It is often used in automotive, industrial, and consumer electronics, where reliability and efficiency are critical.
The part number (BSP149H6327XTSA1) helps in identifying specific parameters like package type, voltage, and current ratings, which are crucial for engineers to ensure compatibility with their designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines to ensure optimal use in your specific application.

Equivalent

The BSP149H6327XTSA1 is a N-channel MOSFET transistor. Equivalent products may include:
1. 2N7002 A widely used N-channel MOSFET with similar specifications.
2. BS170Another N-channel MOSFET that offers similar performance characteristics.
3. BSS138Known for low on-resistance and suitable for similar low-power applications.
When considering an equivalent, ensure the specifications like voltage, current ratings, and package type match your requirements.

Features

The BSP149H6327XTSA1 is a small-signal MOSFET produced by Infineon Technologies. It is designed for applications requiring efficient power management and control. Key features include:
1. N-Channel MOSFET: Facilitates efficient switching and conduction.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) of around 100V.
3. Current Capacity: Capable of handling up to 0.3A of continuous current.
4. Low On-Resistance: Exhibits low R_DS(on), which reduces conduction losses.
5. SOT-363 Package: Comes in a compact SOT-363 package, making it suitable for space-constrained applications.
6. High-Speed Switching: Offers fast switching times, ideal for high-frequency circuits.
7. Low Gate Charge: Minimizes drive power requirements, enhancing efficiency.
8. Thermal Management: Designed to effectively dissipate heat, maintaining performance stability.
These features make the BSP149H6327XTSA1 suitable for use in applications like power management circuits, DC-DC converters, and various portable devices where space and efficiency are critical.

Pinout

The BSP149H6327XTSA1 is a small-signal MOSFET produced by Infineon Technologies. It typically comes in a SOT-223 package and is designed for various switching applications. This MOSFET features a single N-channel configuration.
In terms of pin count and function:
1. Pin Count: It has a total of 3 pins.
2. Pin Functions:
- Pin 1: Gate (G) - This pin is used to control the MOSFET.
- Pin 2: Drain (D) - The current flows from the drain through the channel to the source when the MOSFET is on.
- Pin 3: Source (S) - This is the pin where the current exits the MOSFET.
Additionally, there's a tab on the package which primarily functions as an additional connection to the drain for heat dissipation purposes.
This device is used in applications requiring efficient power management and is known for its low on-state resistance, which is beneficial for minimizing power loss.

Manufacturer

The BSP149H6327XTSA1 is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor manufacturer. It is one of the largest companies in the semiconductor industry, providing a wide range of products including microcontrollers, security ICs, power electronics, and sensors. Infineon focuses on automotive, industrial power control, power management & multimarket, and digital security solutions. Known for innovation, it plays a critical role in advancing technology in areas such as energy efficiency, mobility, and security.

Application

The BSP149H6327XTSA1 is a small-signal MOSFET used in various electronic applications. Its primary areas of application include:
1. Switching Circuits: Ideal for low-power switching applications due to its fast switching speed and low on-resistance.
2. Signal Amplification: Useful in amplifying weak signals in various communication devices.
3. Driver Circuits: Serves as a driver for small loads like LEDs and relays.
4. Consumer Electronics: Utilized in gadgets and devices for efficient power management.
5. Battery-Powered Devices: Suitable for battery-operated applications due to its low power consumption.
These applications leverage the MOSFET's efficiency, compact size, and reliability in managing electronic signals and power.

Package

The BSP149H6327XTSA1 is a part number for a specific transistor. The package type for this component is a TO-263 (also known as D2PAK), which is a surface-mount package used for semiconductors, offering efficient heat dissipation and compact size suitable for power applications.

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