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BSP149H6327XTSA1
+NomenclatureMOSFET N-CH 200V 660MA SOT223-4
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FabricantTechnologie Infineon
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Pièce fabricant #BSP149H6327XTSA1
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Fiche technique BSP149H6327XTSA1 DataSheet
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Package PG-SOT223-4
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En stock5243
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 660mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 0V, 10V |
| RdsOn(Max)@IdVgs | 1.8Ohm @ 660mA, 10V |
| Vgs(th)(Max)@Id | 1V @ 400µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 430 pF @ 25 V |
| FETFeature | Depletion Mode |
| PowerDissipation(Max) | 1.8W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT223-4 |
Présentation
Description
This MOSFET is built using advanced semiconductor technology to provide enhanced performance in terms of thermal management and electrical characteristics. It is often used in automotive, industrial, and consumer electronics, where reliability and efficiency are critical.
The part number (BSP149H6327XTSA1) helps in identifying specific parameters like package type, voltage, and current ratings, which are crucial for engineers to ensure compatibility with their designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines to ensure optimal use in your specific application.
Equivalent
1. 2N7002 A widely used N-channel MOSFET with similar specifications.
2. BS170Another N-channel MOSFET that offers similar performance characteristics.
3. BSS138Known for low on-resistance and suitable for similar low-power applications.
When considering an equivalent, ensure the specifications like voltage, current ratings, and package type match your requirements.
Features
1. N-Channel MOSFET: Facilitates efficient switching and conduction.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) of around 100V.
3. Current Capacity: Capable of handling up to 0.3A of continuous current.
4. Low On-Resistance: Exhibits low R_DS(on), which reduces conduction losses.
5. SOT-363 Package: Comes in a compact SOT-363 package, making it suitable for space-constrained applications.
6. High-Speed Switching: Offers fast switching times, ideal for high-frequency circuits.
7. Low Gate Charge: Minimizes drive power requirements, enhancing efficiency.
8. Thermal Management: Designed to effectively dissipate heat, maintaining performance stability.
These features make the BSP149H6327XTSA1 suitable for use in applications like power management circuits, DC-DC converters, and various portable devices where space and efficiency are critical.
Pinout
In terms of pin count and function:
1. Pin Count: It has a total of 3 pins.
2. Pin Functions:
- Pin 1: Gate (G) - This pin is used to control the MOSFET.
- Pin 2: Drain (D) - The current flows from the drain through the channel to the source when the MOSFET is on.
- Pin 3: Source (S) - This is the pin where the current exits the MOSFET.
Additionally, there's a tab on the package which primarily functions as an additional connection to the drain for heat dissipation purposes.
This device is used in applications requiring efficient power management and is known for its low on-state resistance, which is beneficial for minimizing power loss.
Manufacturer
Application
1. Switching Circuits: Ideal for low-power switching applications due to its fast switching speed and low on-resistance.
2. Signal Amplification: Useful in amplifying weak signals in various communication devices.
3. Driver Circuits: Serves as a driver for small loads like LEDs and relays.
4. Consumer Electronics: Utilized in gadgets and devices for efficient power management.
5. Battery-Powered Devices: Suitable for battery-operated applications due to its low power consumption.
These applications leverage the MOSFET's efficiency, compact size, and reliability in managing electronic signals and power.