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SI7540DP-T1-E3
+NomenclatureMOSFET N/P-CH 12V 7.6A PPAK SO-8
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FabricantSiliconix
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Pièce fabricant #SI7540DP-T1-E3
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Fiche technique SI7540DP-T1-E3 DataSheet
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Package PowerPAK® SO-8 Dual
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En stock8254
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Spécifications
| Attribut | Valeur |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 12V |
| Current-ContinuousDrain(Id)@25°C | 7.6A, 5.7A |
| RdsOn(Max)@IdVgs | 17mOhm @ 11.8A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17nC @ 4.5V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
Présentation
Description
The SI7540DP is a dual n-channel MOSFET, which means it contains two n-channel transistors in a single package. It is designed to handle high currents and operate efficiently at low voltages, making it suitable for power management applications in various electronic devices.
Key specifications often include parameters like drain-source voltage (V_DS), continuous drain current (I_D), on-resistance (R_DS(on)), and gate charge (Q_g). These specifications determine the MOSFET's performance in switching applications, such as DC-DC converters, motor drives, and power supply circuits.
The "T1-E3" part of the designation typically refers to packaging and environmental specifications, including tape and reel packaging for automated assembly and compliance with RoHS (Restriction of Hazardous Substances) standards. Always refer to the official datasheet for detailed specifications and application guidelines.
Equivalent
1. Infineon BSC014N04LSI - Similar specifications, with low RDS(on) and dual N-channel configuration.
2. ON Semiconductor NTMFS5C404NL - Offers comparable performance and package type.
3. NXP PSMN022-30PL - Similar voltage and current ratings.
4. STMicroelectronics STL6N3LLH6 - Dual N-channel with matching characteristics.
Always verify specifications to ensure compatibility.
Features
1. Voltage Rating: It typically operates at a drain-source voltage (V_DS) of around -40V.
2. Current Handling: The MOSFET can handle a continuous drain current (I_D) of approximately -13.4A.
3. Low On-Resistance: The device features a low on-resistance (R_DS(on)) to minimize power losses and improve efficiency.
4. Package Type: It is available in a compact SO-8 package, suitable for space-constrained applications.
5. Thermal Performance: The design supports efficient thermal management, ensuring reliability under high-load conditions.
6. Applications: Commonly used in DC-DC converters, load switches, and battery protection circuits.
7. Enhanced Switching Speed: Offers fast switching capabilities, beneficial for high-frequency applications.
These features make the SI7540DP-T1-E3 suitable for a variety of power management applications, offering a balance between performance and size.