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SI4559ADY-T1-GE3
+NomenclatureMOSFET N/P-CH 60V 5.3A 8-SOIC
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FabricantSiliconix
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Pièce fabricant #SI4559ADY-T1-GE3
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Package SOP-8
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En stock4744
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 5.3A, 3.9A |
| Rds On(Max) @ Id Vgs | 58mOhm @ 4.3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 665pF @ 15V |
| Power - Max | 3.1W, 3.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
The SI4559ADY-T1-GE3 is a power MOSFET, specifically designed for use in electronic devices requiring efficient power management. It is part of Vishay's range of TrenchFET® power MOSFETs, known for their low on-resistance and high efficiency. This component is housed in a small, surface-mount package, making it suitable for compact circuit designs.
Key features of the SI4559ADY-T1-GE3 include its ability to handle high currents and voltages, making it ideal for applications such as DC-DC converters, motor drives, and power supplies. It operates with a low gate charge, ensuring fast switching speeds, which enhances device performance while reducing power losses.
The SI4559ADY-T1-GE3 is built to operate over a wide temperature range, providing reliability in various environmental conditions. Its construction ensures minimal energy wastage and heat generation, which is crucial for maintaining the longevity and efficiency of electronic circuitry. This MOSFET is a component of choice for engineers seeking to optimize power efficiency and performance in their electronic designs.
Key features of the SI4559ADY-T1-GE3 include its ability to handle high currents and voltages, making it ideal for applications such as DC-DC converters, motor drives, and power supplies. It operates with a low gate charge, ensuring fast switching speeds, which enhances device performance while reducing power losses.
The SI4559ADY-T1-GE3 is built to operate over a wide temperature range, providing reliability in various environmental conditions. Its construction ensures minimal energy wastage and heat generation, which is crucial for maintaining the longevity and efficiency of electronic circuitry. This MOSFET is a component of choice for engineers seeking to optimize power efficiency and performance in their electronic designs.
Equivalent
The SI4559ADY-T1-GE3 is a dual N-channel MOSFET. Equivalent products might include:
1. IRF7319 - by International Rectifier
2. FDS8958A - by ON Semiconductor
3. NTMS4902N - by ON Semiconductor
4. DMG3415U - by Diodes Incorporated
These alternatives have similar specifications, but always check datasheets for exact matching parameters to ensure compatibility with your specific application.
1. IRF7319 - by International Rectifier
2. FDS8958A - by ON Semiconductor
3. NTMS4902N - by ON Semiconductor
4. DMG3415U - by Diodes Incorporated
These alternatives have similar specifications, but always check datasheets for exact matching parameters to ensure compatibility with your specific application.
Features
The SI4559ADY-T1-GE3 is a P-channel MOSFET designed for optimal performance in various power management applications. Key features include:
1. Low On-Resistance: It offers a low on-state resistance, which reduces power loss and improves efficiency in electronic circuits.
2. Fast Switching Speed: The device boasts fast switching capabilities, making it suitable for high-speed applications.
3. High Voltage Rating: It supports a wide range of voltages, ensuring reliable operation in diverse environments.
4. Compact Package: Available in the PowerPAK SO-8 package, it provides a small footprint suitable for space-constrained applications.
5. Thermal Performance: The MOSFET is designed to handle high power with effective thermal management.
6. RoHS Compliant: It meets environmental standards for hazardous materials, making it a sustainable choice.
These features make the SI4559ADY-T1-GE3 ideal for use in DC-DC converters, load switches, and other applications requiring efficient power handling.
1. Low On-Resistance: It offers a low on-state resistance, which reduces power loss and improves efficiency in electronic circuits.
2. Fast Switching Speed: The device boasts fast switching capabilities, making it suitable for high-speed applications.
3. High Voltage Rating: It supports a wide range of voltages, ensuring reliable operation in diverse environments.
4. Compact Package: Available in the PowerPAK SO-8 package, it provides a small footprint suitable for space-constrained applications.
5. Thermal Performance: The MOSFET is designed to handle high power with effective thermal management.
6. RoHS Compliant: It meets environmental standards for hazardous materials, making it a sustainable choice.
These features make the SI4559ADY-T1-GE3 ideal for use in DC-DC converters, load switches, and other applications requiring efficient power handling.
Pinout
The SI4559ADY-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It comes in a SO-8 package and has a pin count of 8. This dual N-channel MOSFET is designed for load switching applications. It features low on-resistance, which helps in improving efficiency and reducing power loss. The device is typically used in power management applications, such as DC-DC converters, where efficient switching is crucial.
Key Specifications:
- Configuration: Dual N-channel
- Voltage - Vds: 30V
- Current - Id: 12A
The MOSFET is widely used in various electronic devices for switching and amplifying electronic signals. Its compact SO-8 packaging makes it suitable for space-constrained applications while still handling significant power levels.
Key Specifications:
- Configuration: Dual N-channel
- Voltage - Vds: 30V
- Current - Id: 12A
The MOSFET is widely used in various electronic devices for switching and amplifying electronic signals. Its compact SO-8 packaging makes it suitable for space-constrained applications while still handling significant power levels.
Manufacturer
The SI4559ADY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for producing a wide range of components, including diodes, MOSFETs, resistors, capacitors, and inductors, which are used in various applications across the electronics industry. Vishay's products are essential for a multitude of devices and systems in sectors such as automotive, industrial, computing, consumer electronics, telecommunications, and aerospace. The company operates worldwide, offering both standard and custom-designed components to meet diverse technical demands.
Application
The SI4559ADY-T1-GE3 is a N-channel MOSFET commonly used in various electronic applications. Its primary application areas include power management systems, DC-DC converters, and load switching. It is also used in motor drives and power supply circuits due to its high efficiency and low on-resistance. Additionally, the MOSFET's fast switching capabilities make it suitable for use in automotive, industrial, and consumer electronics where efficient power regulation and thermal management are critical. Its compact packaging and reliability make it a preferred choice for space-constrained and performance-sensitive applications.
Package
The SI4559ADY-T1-GE3 is packaged in a standard surface-mount technology (SMT) format, specifically the SO-8 (Small Outline 8) package. This type of package is commonly used for integrated circuits and allows for efficient mounting on printed circuit boards (PCBs).
