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SICFET N-CH 1200V 12A H2PAK-2
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FabricantSemi - conducteurs optiques
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Pièce fabricant #SCT10N120H
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En stock2024
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Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 20V |
| Rds On(Max) @ Id Vgs | 690mOhm @ 6A, 20V |
| Vgs(th)(Max) @ Id | 3.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| Input Capacitance(Ciss)(Max) @ Vds | 290 pF @ 400 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2Pak-2 |
