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PHKD6N02LT,518
+NomenclatureMOSFET 2N-CH 20V 10.9A SOT96-1
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FabricantNexperia USA Inc.
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Pièce fabricant #PHKD6N02LT,518
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Fiche technique PHKD6N02LT,518 DataSheet
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Package SOIC-8
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En stock8099
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Nexperia USA Inc.,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 10.9A |
| Rds On(Max) @ Id Vgs | 20mOhm @ 3A, 5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15.3nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 950pF @ 10V |
| Power - Max | 4.17W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
