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PHKD3NQ10T,518
+NomenclatureMOSFET 2N-CH 100V 3A 8SOIC
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FabricantNexperia USA Inc.
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Pièce fabricant #PHKD3NQ10T,518
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Fiche technique PHKD3NQ10T,518 DataSheet
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Package SOIC-8
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En stock5612
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR) |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain(Id) @ 25°C | 3A |
| Rds On(Max) @ Id Vgs | 90mOhm @ 1.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 21nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 633pF @ 20V |
| Power - Max | 2W |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
