NTB45N06T4G

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NTB45N06T4G

+Nomenclature

MOSFET N-CH 60V 45A D2PAK

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  • Pièce fabricant #NTB45N06T4G

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Spécifications

Attribut Valeur
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 45A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 26mOhm @ 22.5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 46 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1725 pF @ 25 V
Power Dissipation (Max) 2.4W (Ta), 125W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK

Présentation

Description

NTB45N06T4G is an N‑channel enhancement MOSFET used as a high‑current power switch in power electronics. It’s rated around 60 V VDS and about 45 A continuous current, with a very low on‑resistance (Rds(on)) of roughly 0.045 Ω typical, helping minimize conduction losses. The T4G suffix denotes a RoHS, lead‑free, surface‑mount package variant (packaging type varies by厂) and traceability. Gate threshold is typically 2–4 V; for full enhancement a 10 V gate drive is common (some parts are logic‑level—check the datasheet). Advantages include fast switching, good dv/dt tolerance, and robust avalanche energy, making it suitable for DC‑DC converters, motor drivers, high/low‑side switching, and load switches. For exact specs, thermal data, package details, and pinout, consult the latest manufacturer datasheet.

Equivalent

NTB45N06T4G is a 60 V, 45 A N-channel MOSFET (Pb-free, D2PAK/TO-263). Typical cross equivalents include:
- IRFB45N06 (International Rectifier)
- STP45NF06L (STMicroelectronics)
- NTD45N06 (On Semiconductor)
Always verify exact package, pinout, and Rds(on) in the datasheet.

Features

NTB45N06T4G is an N‑channel enhancement MOSFET. Key features:
- Vds: 60 V; Id: 45 A (continuous)
- Low on-resistance: Rds(on) ≈ tens of milliohms (typical ~0.055 Ω at Vgs=10 V; max varies with temp)
- Gate drive: logic‑level capable (roughly Vgs ~1–4 V threshold, supports 4.5–10 V drive)
- Trench MOSFET technology for fast switching and low conduction losses
- Built‑in body diode; robust avalanche/rugged performance
- Pb‑free, RoHS compliant
- Package: D²PAK/TO‑263 (T4G) surface‑mount option
Applications: switching regulators, motor drives, DC-DC converters, automotive power electronics.
Note: exact electricals depend on temperature and conditions; refer to the datasheet for precise numbers.

Pinout

- Pin count: 3 pins (Gate, Drain, Source); the exposed tab is also Drain (drain tab), so effectively 3 leads plus the tab.
- Function: N-channel enhancement-mode power MOSFET used for switching in power electronics (about 60V, ~45A rating).

Manufacturer

- Manufacturer: Nexperia.
- What kind of company: A Dutch global semiconductor company that designs and manufactures discrete components, including MOSFETs, diodes, and other electronic devices.

Application

NTB45N06T4G is a N-channel MOSFET. Common application areas include:
- High-efficiency switching in DC-DC converters (buck/boost) and switching regulators
- Motor and actuator drives (DC motors, stepper motors, fans)
- Automotive and industrial power management and load switching
- Switching inductive loads (solenoids, relays)
- Inverters and solar-powered power electronics
- General PWM-based on/off switching in power supplies and consumer/industrial electronics
Used as a low-side or high-side switch with appropriate gate drive.

Package

D2PAK (TO-263) surface-mount package.

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