FQD7P20TM

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FQD7P20TM

+Nomenclature

MOSFET P-CH 200V 5.7A DPAK

  • FabricantSemi - conducteurs

  • Pièce fabricant #FQD7P20TM

  • Package DPAK-3

  • En stock6866

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 5.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 690mOhm @ 2.85A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 770 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 55W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Présentation

Description

The FQD7P20TM is a P-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Voltage Rating: -20V (drain-to-source)
- Current Rating: -7.3A (continuous drain current)
- Low On-Resistance (RDS(on)): 28mΩ (at VGS = -4.5V)
- Fast Switching: Suitable for load switching, DC-DC conversion, and battery protection.
- Compact Package: PowerDI-123 (space-efficient for modern designs).
Common uses include power distribution, motor control, and portable electronics. Its low gate charge and efficient thermal performance make it ideal for high-efficiency, low-power-loss systems.
For detailed specs, refer to the datasheet.

Equivalent

The FQD7P20TM is a P-channel MOSFET (20V, 7.5A). Equivalent alternatives include:
- IRLML6401 (20V, 4.2A)
- SI2301DS (20V, 2.3A)
- AO3401 (30V, 4A)
- DMG2305UX (20V, 5.7A)
Check datasheets for exact specs like RDS(on) and package compatibility. For higher current, consider FQD12P20TM (20V, 12A). Always verify pinouts and parameters for your application.

Features

The FQD7P20TM is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-to-Source, VDSS)
- Current Rating: -7.0A (Continuous Drain Current, ID)
- Low On-Resistance: 45mΩ (max) at VGS = -4.5V
- Gate Threshold Voltage (VGS(th)): -1.0V to -2.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 2.5W (TA = 25°C)
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, load switching, DC-DC converters
Designed for high efficiency and compact circuits, it’s suitable for battery-powered devices and low-voltage systems.

Pinout

The FQD7P20TM is a P-channel MOSFET in a TO-252 (DPAK) package with 3 pins (Gate, Drain, Source).
Key Features:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -7.3A (Continuous Drain)
- Low On-Resistance (RDS(on)): ~28mΩ @ VGS = -10V
- Logic-Level Gate Drive (suitable for -4.5V to -20V VGS)
Functions:
- Gate (Pin 1): Controls switching.
- Drain (Pin 2): Connects to load (negative side for high-side switching).
- Source (Pin 3): Connects to power supply (typically ground in P-channel config).
Commonly used in power management, load switching, and DC-DC conversion.

Package

The FQD7P20TM is a PowerTrench MOSFET in a TO-252 (DPAK) surface-mount package. It features low on-resistance and high-speed switching, suitable for power management applications. The package is compact, with a tab for heat dissipation, making it ideal for high-efficiency designs.

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