NSS60201LT1G

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NSS60201LT1G

+Nomenclature

TRANS NPN 60V 2A SOT23-3

  • FabricantSemi - conducteurs

  • Pièce fabricant #NSS60201LT1G

  • Package SOT-23-3

  • En stock1433

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type NPN
Current - Collector(Ic)(Max) 2 A
Voltage - Collector Emitter Breakdown(Max) 60 V
Vce Saturation(Max) @ Ib Ic 140mV @ 200mA, 2A
Current - Collector Cutoff(Max) 100nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 150 @ 1A, 2V
Power - Max 460 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Présentation

Description

The NSS60201LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Manufactured by ON Semiconductor, it features a maximum collector current of 500 mA and a maximum collector-emitter voltage of 40V. The device offers a transition frequency of 300 MHz, making it suitable for high-speed applications. With a low saturation voltage, it provides efficient performance in switching circuits.
The transistor is housed in a compact SOT-23 surface-mount package, which is beneficial for space-constrained designs. Its thermal resistance and power dissipation capabilities are carefully engineered to ensure reliability under various operating conditions. The NSS60201LT1G is commonly used in consumer electronics, automotive systems, and industrial applications due to its versatility and robust performance.
Engineers select this transistor for its balance of cost, performance, and size, making it a popular choice for both prototyping and production designs. The component is widely available and supported by extensive documentation and reference designs from the manufacturer.

Equivalent

Equivalent products to the NSS60201LT1G chip include the BSS84, 2N7002, and MMBT3906, which are also general-purpose MOSFETs used for switching and amplification in small signal applications. When selecting equivalents, ensure that the voltage, current ratings, and package type are compatible with your specific requirements. Always verify with datasheets for precise specifications and compatibility.

Features

The NSS60201LT1G is a low-side, NPN bipolar junction transistor (BJT) intended for general-purpose switching applications. Key features include:
1. Low Collector-Emitter Saturation Voltage: This feature allows for efficient operation, reducing power loss during switching.
2. High Current Gain: It offers a high DC current gain, ensuring effective amplification of the input signal.
3. Compact Package: The transistor is housed in a compact SOT-23 package, making it suitable for space-constrained applications.
4. High Reliability: Built to deliver consistent performance under various operating conditions.
5. Thermal Stability: Designed to maintain performance across a wide temperature range.
6. RoHS Compliance: It adheres to environmentally friendly standards, being free from lead and other hazardous substances.
These features make the NSS60201LT1G suitable for applications in power management, signal processing, and general switching in electronic circuits.

Pinout

The NSS60201LT1G is a dual NPN transistor array. It features a 6-pin configuration. The primary function of this device is to amplify or switch electronic signals. The dual NPN transistors are designed for use in general-purpose amplifier applications and can also be employed in switching applications due to their high current gain and low saturation voltage. Each transistor within the array has its own collector, base, and emitter pins. The compact design in a single package allows for efficient use in circuit layouts where space is a constraint.

Manufacturer

The NSS60201LT1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor supplier that focuses on energy-efficient electronics, providing a wide range of semiconductor products including power management, analog, sensors, logic, timing, discrete, and custom devices. The company serves a variety of markets, including automotive, industrial, cloud, and Internet of Things (IoT) applications. onsemi is recognized for its innovation in developing semiconductors that enhance the efficiency, reliability, and performance of electronic devices.

Application

The NSS60201LT1G is a high-current, low-voltage NPN bipolar junction transistor designed for various applications. Key application areas include:
1. Switching and Amplification: It is commonly used in circuits requiring efficient switching and signal amplification.
2. Power Management: Suitable for power management tasks in portable devices due to its high current capability and low voltage operation.
3. Motor Control: Utilized in DC motor control circuits, providing reliable performance in driving applications.
4. Consumer Electronics: Found in consumer electronic devices for general-purpose switching tasks.
5. LED Drivers: Employed in LED driver circuits to manage current flow effectively.
These applications leverage the transistor's ability to handle high currents and operate at low voltages efficiently.

Package

The NSS60201LT1G is a PNP bipolar junction transistor (BJT) that comes in a SOT-23 package. The SOT-23 is a small, surface-mount package commonly used for discrete semiconductors like transistors and diodes, featuring three pins.

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