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SMMBT3906LT1G
+NomenclatureTRANS PNP 40V 0.2A SOT23-3
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FabricantSemi - conducteurs
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Pièce fabricant #SMMBT3906LT1G
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Package SOT-23-3
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En stock3610
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 200 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 400mV @ 5mA, 50mA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 10mA, 1V |
| Power - Max | 300 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
The SMMBT3906LT1G is a general-purpose PNP bipolar junction transistor (BJT) commonly used in switching and amplification applications. Manufactured by ON Semiconductor, it is known for its reliability and efficient performance. The transistor is housed in a compact SOT-23 surface-mount package, making it suitable for high-density circuit designs.
Key specifications include a collector-emitter voltage (Vceo) of -40V, a collector current (Ic) of -200mA, and a DC current gain (hFE) ranging from 100 to 300. Its maximum power dissipation is 225 mW, and it operates efficiently across a broad temperature range from -55°C to 150°C. This makes it ideal for various consumer electronics and industrial applications that require compact and robust transistor solutions.
The SMMBT3906LT1G transistor is designed to be used in small signal applications, with common usages in audio signal amplification, low-speed switching, and sensor signal processing. It offers an excellent balance between performance and cost-effectiveness, making it a popular choice among electronics designers and engineers.
Key specifications include a collector-emitter voltage (Vceo) of -40V, a collector current (Ic) of -200mA, and a DC current gain (hFE) ranging from 100 to 300. Its maximum power dissipation is 225 mW, and it operates efficiently across a broad temperature range from -55°C to 150°C. This makes it ideal for various consumer electronics and industrial applications that require compact and robust transistor solutions.
The SMMBT3906LT1G transistor is designed to be used in small signal applications, with common usages in audio signal amplification, low-speed switching, and sensor signal processing. It offers an excellent balance between performance and cost-effectiveness, making it a popular choice among electronics designers and engineers.
Equivalent
The SMMBT3906LT1G is a PNP bipolar junction transistor (BJT). Equivalent products include 2N3906, BC558, BC556, and MMBT3906 though specifications like package type and current ratings may differ slightly. Always verify the specific requirements such as voltage, current ratings, and package type when selecting an equivalent to ensure compatibility with your application.
Features
The SMMBT3906LT1G is a bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Polarity: PNP
2. Collector-Emitter Voltage (Vceo): 40V
3. Collector-Base Voltage (Vcbo): 40V
4. Emitter-Base Voltage (Vebo): 5V
5. Collector Current (Ic): 200mA
6. Power Dissipation (Pd): 625mW
7. DC Current Gain (hFE): Ranges from 100 to 300
8. Package: SOT-23, which is suitable for surface-mount technology
9. Low Noise: Ideal for audio and other low-noise applications
10. High-Speed Switching: Useful for fast-switching circuits
11. Temperature Range: Typically -55°C to +150°C
The SMMBT3906LT1G is widely used in electronic circuits for its reliable performance in small signal amplification and switching tasks. It is commonly utilized in consumer electronics, automotive systems, and communication devices.
1. Polarity: PNP
2. Collector-Emitter Voltage (Vceo): 40V
3. Collector-Base Voltage (Vcbo): 40V
4. Emitter-Base Voltage (Vebo): 5V
5. Collector Current (Ic): 200mA
6. Power Dissipation (Pd): 625mW
7. DC Current Gain (hFE): Ranges from 100 to 300
8. Package: SOT-23, which is suitable for surface-mount technology
9. Low Noise: Ideal for audio and other low-noise applications
10. High-Speed Switching: Useful for fast-switching circuits
11. Temperature Range: Typically -55°C to +150°C
The SMMBT3906LT1G is widely used in electronic circuits for its reliable performance in small signal amplification and switching tasks. It is commonly utilized in consumer electronics, automotive systems, and communication devices.
Pinout
The SMMBT3906LT1G is a PNP bipolar junction transistor. It is commonly used for general-purpose switching and amplification applications. This transistor typically comes in a SOT-23 package. The SOT-23 package has three pins, which are arranged as follows:
1. Pin 1 (Base): This is the control pin that regulates the current flow between the collector and emitter.
2. Pin 2 (Emitter): This pin emits carriers into the base region, and is the terminal through which current leaves the transistor.
3. Pin 3 (Collector): This pin collects carriers from the base region, and is the terminal through which current enters the transistor.
The SMMBT3906LT1G is used in applications such as signal amplification, switching, and other low-power electronic circuits.
1. Pin 1 (Base): This is the control pin that regulates the current flow between the collector and emitter.
2. Pin 2 (Emitter): This pin emits carriers into the base region, and is the terminal through which current leaves the transistor.
3. Pin 3 (Collector): This pin collects carriers from the base region, and is the terminal through which current enters the transistor.
The SMMBT3906LT1G is used in applications such as signal amplification, switching, and other low-power electronic circuits.
Manufacturer
The SMMBT3906LT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor supplier company that specializes in intelligent power and sensing technologies. It provides a wide range of semiconductor solutions for various applications, including automotive, industrial, cloud, medical, and Internet of Things (IoT) markets. The company is known for its innovations in energy-efficient electronics and has a global presence with manufacturing facilities, research and development centers, and design centers around the world.
Application
The SMMBT3906LT1G is a PNP bipolar junction transistor commonly used in various applications such as:
1. Switching Circuits: Utilized for switching low power loads in electronic circuits.
2. Amplifiers: Employed in low to medium current amplification tasks.
3. Signal Processing: Suitable for small signal amplification in audio and radio frequency circuits.
4. General Purpose Applications: Versatile use in hobby electronics and educational projects.
Its compact surface-mount package makes it ideal for space-constrained designs in consumer electronics and communication devices.
1. Switching Circuits: Utilized for switching low power loads in electronic circuits.
2. Amplifiers: Employed in low to medium current amplification tasks.
3. Signal Processing: Suitable for small signal amplification in audio and radio frequency circuits.
4. General Purpose Applications: Versatile use in hobby electronics and educational projects.
Its compact surface-mount package makes it ideal for space-constrained designs in consumer electronics and communication devices.
Package
The SMMBT3906LT1G is a PNP bipolar junction transistor (BJT) and is typically supplied in a SOT-23 surface-mount package.
