NJD2873T4G

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NJD2873T4G

+Nomenclature

TRANS NPN 50V 2A DPAK

  • FabricantSemi - conducteurs

  • Pièce fabricant #NJD2873T4G

  • Package DPAK-3

  • En stock5546

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 2 A
Voltage-CollectorEmitterBreakdown(Max) 50 V
VceSaturation(Max)@IbIc 300mV @ 50mA, 1A
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 120 @ 500mA, 2V
Power-Max 1.68 W
Frequency-Transition 65MHz
OperatingTemperature -65°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Présentation

Description

The NJD2873T4G is a high-performance N-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 3.8mΩ (max) at VGS = 10V
- Fast Switching: Optimized for efficiency in DC-DC converters, motor control, and load switching.
- Package: D2PAK (TO-263), suitable for high-power dissipation.
Ideal for automotive, industrial, and consumer electronics, it offers robust thermal performance and reliability. Its low gate charge (Qg) ensures minimal switching losses, enhancing energy efficiency.
For detailed specs, refer to the datasheet.

Features

The NJD2873T4G is a PNP bipolar junction transistor (BJT) with the following key features:
- Type: PNP Transistor
- Voltage Ratings:
- Collector-Emitter Voltage (VCEO): -50V
- Collector-Base Voltage (VCBO): -50V
- Emitter-Base Voltage (VEBO): -5V
- Current Ratings:
- Continuous Collector Current (IC): -2A
- Power Dissipation (PD): 1.5W (at 25°C)
- DC Current Gain (hFE): 100–400 (at IC = -150mA)
- Package: SOT-223 (compact surface-mount)
- Applications: Switching, amplification, and general-purpose circuits.
Compact, efficient, and suitable for low-to-medium power applications.

Pinout

The NJD2873T4G is a P-channel MOSFET in a SOT-23-3 package, featuring 3 pins with the following functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D) – Output connection to the load.
Key specs:
- -30V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low RDS(on) (~50mΩ at VGS = -10V)
Commonly used for power switching, load control, and DC-DC conversion.

Manufacturer

The NJD2873T4G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor (now known as onsemi) specializes in energy-efficient technologies, including power management, analog, and sensor products. The company serves industries like automotive, industrial, and consumer electronics, focusing on innovation and sustainability.
The NJD2873T4G is a dual NPN transistor array, commonly used in amplification and switching applications.

Application

The NJD2873T4G is a PNP bipolar transistor commonly used in:
1. Switching Circuits – For on/off control in electronic devices.
2. Amplification – In audio and signal amplification applications.
3. Power Management – For voltage regulation and power supply circuits.
4. Motor Control – In small motor drivers and control systems.
5. Consumer Electronics – Found in TVs, audio equipment, and other household devices.
Its high current capability (up to 2A) and low saturation voltage make it suitable for efficient power handling in compact designs.

Package

The NJD2873T4G is a PNP transistor available in a SOT-223 surface-mount package. This compact package is designed for efficient power dissipation and is commonly used in power management applications. It features three pins with a tab for heat dissipation.

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