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MT47H64M8CF-25E:G
+NomenclatureIC DRAM 512MBIT PARALLEL 60FBGA
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FabricantMicron Technology Co., Ltd.
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Pièce fabricant #MT47H64M8CF-25E:G
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Fiche technique MT47H64M8CF-25E:G DataSheet
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Package TFBGA-60
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En stock3782
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mb (64M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
Présentation
Description
Features
- 64M × 8 organization (512 Mbit total)
- Synchronous DRAM (SDRAM) with JEDEC-compatible timings
- Multi-bank architecture (typical 8 banks)
- Burst mode support (BL4/BL8) and page mode access
- 8-bit data I/O (x8 bus)
- Auto-refresh and self-refresh
- Pb-free RoHS-compliant (G suffix)
Note: exact operating voltage, speed grade, and timing parameters depend on the specific variant; check the datasheet for your lot.
Pinout
Function: 64M × 8 dynamic RAM (512 Mbit total) with an 8-bit data bus. It is a synchronous SDRAM memory device, using standard SDRAM signals (RAS, CAS, WE, CS, BA[1:0], A[0:12], DQ[7:0], DQM[1:0], CK/CK#, CKE, etc.).
Manufacturer
What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, and related memory products).
Application
- Main system memory for desktops and notebooks (DDR2 modules)
- Embedded systems requiring DRAM (industrial, telecom, consumer electronics)
- Networking equipment (routers, switches, line cards)
- Storage/controllers and digital home devices (set-top boxes, DVRs, media players)
- Industrial/automotive applications with board-level memory needs