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MT40A4G8BAF-062E:B
+NomenclatureIC FLASH 32GBIT PARALLEL 78FBGA
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FabricantMicron Technology Co., Ltd.
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Pièce fabricant #MT40A4G8BAF-062E:B
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Package TFBGA-78
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En stock6312
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Spécifications
| Attribut | Valeur |
| Package / Case | Tray |
| Series | TwinDie™ |
| Part Status | Last Time Buy |
| Memory Type | Non-Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 32Gb (4G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Access Time | 13.75 ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
Présentation
Description
This DDR4 memory module is designed to provide improved performance and higher bandwidth compared to its predecessors, such as DDR3, while consuming less power, which makes it suitable for a range of applications from personal computing to enterprise servers. The "BAF" in its naming might refer to specific features or configurations that are unique to this chip series. As part of Micron's product lineup, this DRAM chip is known for its reliability and efficiency, making it a popular choice in the industry.
Equivalent
1. Samsung K4A8G085WB-BCTD - Similar DDR4 offering from Samsung.
2. SK Hynix H5AN8G8NCJR-UHC - Comparable DDR4 SDRAM from SK Hynix.
3. Kingston D4AG8B26C-62B - Equivalent DDR4 memory from Kingston.
These products have similar specifications and can be used interchangeably in compatible systems.
Features
The device supports various functionalities such as On-Die Termination (ODT), which helps improve signal integrity and reduce reflections on the data lines. It also includes features like Command/Address (CA) parity detection and error correction code (ECC) support, enhancing data reliability and integrity by detecting and correcting errors during data transfer. Additionally, the chip is designed for compatibility with a wide range of computing platforms, leveraging its robust performance capabilities to support intensive applications. Overall, the MT40A4G8BAF-062E:B offers a reliable solution for modern memory requirements in computing systems.
Pinout
The primary function of this DRAM is to provide high-speed, high-density memory for computing systems. It is designed to operate with a data rate of up to 2400 MT/s (megatransfers per second), and it supports features such as a double data rate (DDR) architecture, which allows for data to be transferred on both the rising and falling edges of the clock signal, enhancing throughput.
The device offers various features, including bank group architecture, programmable CAS latency, and on-die termination, making it suitable for a wide range of applications, from personal computers to servers and networking equipment.
Manufacturer
Application
1. Computing: Used in servers, desktops, and laptops for enhanced performance and higher data transfer rates.
2. Networking: Supports high-speed data processing in networking equipment like routers and switches.
3. Storage Systems: Enhances data handling capabilities in SSDs and other storage devices.
4. Embedded Systems: Applied in embedded applications requiring efficient memory solutions for industrial and consumer electronics.
5. Data Centers: Facilitates memory-intensive operations in data center environments.
6. Telecommunications: Provides reliable memory for telecom infrastructure and equipment.
These applications benefit from the high capacity, speed, and efficiency of DDR4 memory technology.