MT29F4G08ABBEAH4:E

MT29F4G08ABBEAH4:E is Micron’s MT29F4G08AB series NAND flash memory. It is a 4 Gbit (512 MB), multi-level cell (MLC) parallel NAND with an x8 data bus and ONFI-compatible asynchronous interface, typically powered from 3.3 V. Organization is 262,144 pages of 2 KB each, arranged in 4,096 blocks of 64 pages (roughly 128 KB data per block; 64 bytes spare per page). It supports standard NAND operations (read, program load, program confirm, erase), multi‑plane operations, and includes ECC, bad-block management, and wear leveling. The trailing E denotes an extended temperature grade, usually -40 °C to 85 °C; exact speed grade and packaging depend on the full part variant (ABEAH4, etc.). Use cases include firmware/storage in embedded systems, data logging, and portable devices. For precise timings, electrical specs, and command sets, refer to the MT29F4G08ABBEAH4 datasheet and the exact lot/package documentation.

MT29F4G08ABBEAH4:E features (concise):
- 4 Gbit NAND Flash memory
- Multi-Level Cell (MLC) technology
- ONFI-compatible parallel interface
- Multi-plane/multi-block architecture for parallel operations
- Bad-block management and wear leveling
- ECC support via controller (BCH) for data integrity
- Typical supply: Vcc around 2.7–3.6 V
- Extended temperature variant: -40°C to 85°C (E suffix)
- Suitable for embedded storage and SSD/applications requiring NAND flash storage cores

Pin count: 48 pins.
Function: Micron MT29F4G08ABBEAH4:E is a 4 Gbit parallel NAND Flash memory with an 8‑bit data I/O bus. Typical pins include:
- DQ0–DQ7: data I/O
- A0–A17 (address inputs)
- CLE: Command Latch Enable
- ALE: Address Latch Enable
- WE#: Write Enable
- RE#: Read Enable
- CE#: Chip Enable
- WP#: Write Protect
- R/B#: Ready/Busy
- Vcc, Vccq (IO/core supply), GND
- NC (not connected)
(Exact pin-to-pin mapping may vary by package; the device is a 48‑pin NAND flash with standard NAND interface.)

Manufacturer: Micron Technology, Inc.
Kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND flash, NOR flash) and related components; one of the world’s largest memory manufacturers.

MT29F4G08ABBEAH4:E is a 4‑Gbit NAND flash memory. Typical application areas include:
- Embedded/non-volatile storage for mobile devices and consumer electronics (smartphones, tablets, cameras, set‑top boxes)
- Boot code and data storage for embedded systems, microcontrollers, and SoCs
- Automotive and industrial electronics (infotainment, telematics, instrument clusters, control units)
- Networking/IoT devices (firmware and configuration data)
- Removable/embedded storage in USB drives, memory cards, and other portable storage solutions
Note: actual use depends on system design and required capacity.

FBGA (ball-grid array) package. For exact ball count/pitch, refer to the Micron MT29F4G08ABBEAH4:E datasheet.