Images à titre indicatif uniquement
MT29F1G08ABBEAH4-AITX:E
+NomenclatureIC FLASH 1GBIT PARALLEL 63VFBGA
-
FabricantMicron Technology Co., Ltd.
-
Pièce fabricant #MT29F1G08ABBEAH4-AITX:E
-
Package VFBGA-63
-
En stock4357
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Présentation
Description
The product is designed for a broad range of applications, including consumer electronics, industrial devices, and embedded systems, where reliable and efficient memory storage is essential. It operates within a specified temperature range, noted by the "AITX" designation, indicating suitability for automotive or industrial environments. With advanced error correction technologies and wear-leveling capabilities, the MT29F1G08ABBEAH4-AITX:E supports improved data integrity and component longevity. This chip is typically used in scenarios requiring robust performance and high endurance, such as boot drives, code storage, or data logging.
Equivalent
1. Samsung: K9F1G08U0F
2. Toshiba: TC58NVG0S3HTA00
3. Hynix: H27U1G8F2B
These NAND Flash memory chips offer similar storage capacities and are commonly used in comparable applications. Always verify the specific configurations and features to ensure compatibility with your design requirements.
Features
1. Capacity: 1 Gigabit (128 Megabytes).
2. Architecture: Single-level cell (SLC) NAND, which offers better endurance and reliability compared to multi-level cell architectures.
3. Package Type: TSOP (Thin Small Outline Package), making it suitable for space-constrained applications.
4. Interface: Supports an 8-bit interface for data transactions.
5. Voltage: Operates at a typical voltage of 3.3V.
6. Performance: Capable of fast read and write cycles, supporting high-speed data access.
7. Endurance: Offers robust data retention and endurance, ideal for applications requiring frequent data writing and erasure.
8. Temperature Range: Designed to function over an industrial temperature range, suitable for various application environments.
These features make it suitable for use in embedded systems, industrial applications, and other scenarios where high reliability and performance are critical.
Pinout
Key functions and features include:
1. 1 Gigabit Capacity: Provides a storage capacity of 1Gb, organized as 128M x 8 bits.
2. NAND Interface: Utilizes a NAND-type interface for data input and output operations.
3. Asynchronous Operation: Supports standard asynchronous operations for data accesses.
4. Error Correction Code (ECC) Requirement: Requires ECC management to ensure data integrity.
5. High Speed: Offers high-speed data transfer capabilities.
6. Low Power Consumption: Designed to consume minimal power, making it suitable for battery-powered devices.
7. Endurance and Reliability: Offers high endurance and data retention characteristics suitable for non-volatile storage.
For detailed pin configuration and specific functionality, refer to the chip's datasheet provided by Micron Technology.
Manufacturer
Application
1. Consumer Electronics: Used in devices like smartphones, tablets, and digital cameras for storage.
2. Embedded Systems: Provides non-volatile storage for system firmware and data in automotive and industrial devices.
3. Solid State Drives (SSDs): Used as a storage component in SSDs for faster data access and reliability.
4. Networking: Employed in routers and switches for configuration and data storage.
5. IoT Devices: Provides compact storage solutions in Internet of Things applications.
These applications benefit from its high-density storage, durability, and fast data access capabilities.