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MMBT6427LT1G
+NomenclatureTRANS NPN DARL 40V 0.5A SOT23-3
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FabricantSemi - conducteurs
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Pièce fabricant #MMBT6427LT1G
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Package SOT-23-3
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En stock4001
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN - Darlington |
| Current - Collector(Ic)(Max) | 500 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 1.5V @ 500µA, 500mA |
| Current - Collector Cutoff(Max) | 1µA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 20000 @ 100mA, 5V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
- Type: PNP
- Voltage Ratings:
- VCEO: -40V (Collector-Emitter)
- VCBO: -40V (Collector-Base)
- Current Ratings:
- IC: -600mA (Continuous Collector Current)
- Power Dissipation: 225mW
- Gain (hFE): 100–300 (at IC = -10mA)
- Package: SOT-23 (Small Surface-Mount)
Applications:
- Low-power switching
- Signal amplification
- Load driving in portable electronics
Its compact SOT-23 package makes it suitable for space-constrained designs. Check datasheets for detailed specs.
Equivalent
- BC857BLT1G (ON Semiconductor)
- 2N2907A (TO-92 package, similar specs)
- MMBT2907ALT1G (ON Semiconductor)
- BC807-25LT1G (Nexperia)
Check datasheets for exact parameter matching (e.g., Vceo, Ic, hFE). These are common substitutes in SMD/SOT-23 packages.
Features
- Type: PNP transistor
- Package: SOT-23 (small surface-mount)
- Voltage Ratings:
- Collector-Emitter Voltage (VCEO): -40V
- Collector-Base Voltage (VCBO): -40V
- Emitter-Base Voltage (VEBO): -5V
- Current Ratings:
- Continuous Collector Current (IC): -600mA
- Peak Collector Current (ICM): -1A
- Power Dissipation (PD): 225mW
- DC Current Gain (hFE): 100–300 (at IC = -150mA)
- Switching Speed: Fast switching with transition frequency (fT) of 250MHz
Applications: Low-power amplification, switching circuits, and signal processing in compact electronics.
Pinout
1. Emitter (E) – Connected to the ground or lower voltage.
2. Base (B) – Controls the transistor's switching/amplification.
3. Collector (C) – Connects to the load or higher voltage.
Key features:
- Low-voltage, high-current switching/amplification.
- VCEO = -40V, IC = -600mA (max).
- Commonly used in signal amplification, switching circuits, and driver applications.
Manufacturer
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The MMBT6427LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23 package, commonly used for amplification and switching applications.
Application
1. Switching Circuits – Fast switching in digital/logic applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Load Driving – Controlling relays, LEDs, or motors in low-power systems.
4. Signal Inversion – Used in logic-level shifting or waveform shaping.
5. Consumer Electronics – Found in portable devices, power management, and sensor interfaces.
Its SOT-23 package makes it suitable for compact, space-constrained designs.
