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MMBT3906TT1G
+NomenclatureTRANS PNP 40V 0.2A SC75 SOT416
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FabricantSemi - conducteurs
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Pièce fabricant #MMBT3906TT1G
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Package SC-75
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En stock4215
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 200 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 400mV @ 5mA, 50mA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 10mA, 1V |
| Power - Max | 200 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
The MMBT3906TT1G is a PNP bipolar junction transistor (BJT) commonly used in electronic circuits for amplification and switching applications. It is part of the 3906 series, recognized for its reliability and versatility in low-power applications. The transistor is housed in a compact SOT-23 surface-mount package, making it suitable for high-density circuit board layouts.
Key specifications of the MMBT3906TT1G include a collector-emitter voltage (V_ce) of -40V, a collector current (I_c) of -200mA, and a power dissipation of 625mW. It has a transition frequency of approximately 250 MHz, which allows it to perform well in high-frequency applications. The device is notable for its low saturation voltage and high current gain, making it efficient in energy usage.
Manufactured by ON Semiconductor, the MMBT3906TT1G is widely used in consumer electronics, automotive, industrial, and telecommunications applications. Its robustness and ease of use make it a staple component for engineers and designers working on a variety of electronic projects.
Key specifications of the MMBT3906TT1G include a collector-emitter voltage (V_ce) of -40V, a collector current (I_c) of -200mA, and a power dissipation of 625mW. It has a transition frequency of approximately 250 MHz, which allows it to perform well in high-frequency applications. The device is notable for its low saturation voltage and high current gain, making it efficient in energy usage.
Manufactured by ON Semiconductor, the MMBT3906TT1G is widely used in consumer electronics, automotive, industrial, and telecommunications applications. Its robustness and ease of use make it a staple component for engineers and designers working on a variety of electronic projects.
Equivalent
The MMBT3906TT1G is a PNP bipolar junction transistor. Equivalent products include:
1. 2N3906 - A commonly used PNP transistor with similar specifications.
2. BC556 - Another PNP transistor with comparable characteristics.
3. BC327 - Offers similar performance parameters.
Always verify the specific parameters like current gain, voltage, and package type to ensure compatibility for your application.
1. 2N3906 - A commonly used PNP transistor with similar specifications.
2. BC556 - Another PNP transistor with comparable characteristics.
3. BC327 - Offers similar performance parameters.
Always verify the specific parameters like current gain, voltage, and package type to ensure compatibility for your application.
Features
The MMBT3906TT1G is a general-purpose PNP bipolar junction transistor (BJT) designed for amplification and switching applications. Key features include:
1. Polarity: PNP
2. Collector-Emitter Voltage (V_ceo): -40V
3. Collector-Base Voltage (V_cbo): -40V
4. Emitter-Base Voltage (V_ebo): -5V
5. Collector Current (I_c): -200mA
6. Power Dissipation: 225mW
7. DC Current Gain (h_FE): Typically between 100 to 300
8. Transition Frequency (f_T): 250 MHz
9. Package Type: SOT-523, which is suitable for surface-mount technology (SMT)
10. Operating Temperature Range: -55°C to +150°C
The MMBT3906TT1G is ideal for low-power applications and can be used in various electronic projects requiring small signal switching and amplification. Its surface-mount design allows it to be used in compact and densely packed circuits.
1. Polarity: PNP
2. Collector-Emitter Voltage (V_ceo): -40V
3. Collector-Base Voltage (V_cbo): -40V
4. Emitter-Base Voltage (V_ebo): -5V
5. Collector Current (I_c): -200mA
6. Power Dissipation: 225mW
7. DC Current Gain (h_FE): Typically between 100 to 300
8. Transition Frequency (f_T): 250 MHz
9. Package Type: SOT-523, which is suitable for surface-mount technology (SMT)
10. Operating Temperature Range: -55°C to +150°C
The MMBT3906TT1G is ideal for low-power applications and can be used in various electronic projects requiring small signal switching and amplification. Its surface-mount design allows it to be used in compact and densely packed circuits.
Pinout
The MMBT3906TT1G is a PNP bipolar junction transistor (BJT) commonly used in general-purpose amplification and switching applications. It comes in a SOT-416 (SC-75) package, which is a small surface-mount design. The transistor has a pin count of 3, and its pin configuration is as follows:
1. Pin 1: Emitter (E) - This is the pin through which the current exits the transistor. It is typically connected to the ground or negative side of the circuit in common configurations.
2. Pin 2: Base (B) - This is the control pin for the transistor. A small current or voltage applied to the base controls the larger current that flows through the collector-emitter path.
3. Pin 3: Collector (C) - This is the pin through which the main current enters the transistor. It is usually connected to the load in switching applications.
The MMBT3906TT1G is used for switching applications and general amplification, characterized by a decent current gain and moderate frequency response.
1. Pin 1: Emitter (E) - This is the pin through which the current exits the transistor. It is typically connected to the ground or negative side of the circuit in common configurations.
2. Pin 2: Base (B) - This is the control pin for the transistor. A small current or voltage applied to the base controls the larger current that flows through the collector-emitter path.
3. Pin 3: Collector (C) - This is the pin through which the main current enters the transistor. It is usually connected to the load in switching applications.
The MMBT3906TT1G is used for switching applications and general amplification, characterized by a decent current gain and moderate frequency response.
Manufacturer
The MMBT3906TT1G is manufactured by ON Semiconductor. ON Semiconductor is a leading supplier and manufacturer of semiconductor-based solutions. The company provides a wide range of products including power and signal management, logic, discrete, and custom devices for a variety of applications across different industries. These industries include automotive, communications, computing, consumer electronics, industrial, and medical sectors, among others. ON Semiconductor focuses on energy-efficient innovations, aiming to reduce global energy use while providing customers with high-performance solutions.
Application
The MMBT3906TT1G is a general-purpose PNP bipolar junction transistor (BJT) widely used in various applications. It is commonly employed in switching and amplifier circuits due to its moderate current and voltage ratings. Specific application areas include signal amplification, low-power switching, and interfacing within electronic circuits, such as in consumer electronics, computing devices, and communication equipment. It is also used in load drivers, analog circuits, and as part of small-signal processing tasks. Its compact surface-mount package makes it suitable for space-constrained designs in modern electronic products.
Package
The MMBT3906TT1G is a PNP bipolar junction transistor housed in a SOT-416 (SC-75) surface-mount package. This small-outline package is designed for surface-mount technology applications, providing compact size and efficient performance in electronic circuits.
