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MMBT2222ATT1G
+NomenclatureTRANS NPN 40V 0.6A SC75 SOT416
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FabricantSemi - conducteurs
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Pièce fabricant #MMBT2222ATT1G
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Fiche technique MMBT2222ATT1G DataSheet
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Package SOT-416
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En stock13486
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 1V @ 50mA, 500mA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 150mA, 10V |
| Power - Max | 150 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
The key features of the MMBT2222ATT1G include its ability to handle a maximum collector current (Ic) of 600 mA and a maximum collector-emitter voltage (Vce) of 40V, making it versatile for a variety of low to medium-power tasks. Its high-speed switching capability and solid gain performance make it ideal for analog and digital applications, including signal amplification, driving loads, and digital circuit interfacing.
Due to its small size, the MMBT2222ATT1G is often used in space-constrained environments like telecommunications equipment, consumer electronics, and automotive circuits. It is favored for its balance of performance, size, and cost-effectiveness.
Equivalent
1. MMBT2222A (generic)
2. 2N2222A (through-hole version)
3. PN2222A (through-hole version)
4. BC547B (with some different specs)
5. KST2222A
Always verify the specifications and pin configurations as they can vary slightly between manufacturers and packaging types.
Features
1. Package Type: It comes in a compact SOT-416 (SC-75) surface-mount package, which is suitable for high-density PCB layouts.
2. Voltage and Current Ratings: The transistor has a collector-emitter voltage (V_CE) of 40V, a collector-base voltage (V_CB) of 75V, and a continuous collector current (I_C) of 600mA.
3. Power Dissipation: It offers a power dissipation capability of 150mW.
4. Gain: Provides a DC current gain (h_FE) typically ranging from 100 to 300, making it suitable for amplification tasks.
5. Frequency: It has a transition frequency (f_T) of up to 300 MHz, which supports high-speed switching.
6. Thermal Management: The device has built-in thermal characteristics to handle moderate power levels efficiently.
7. RoHS Compliance: The component is RoHS compliant, indicating it contains no hazardous substances.
These features make the MMBT2222ATT1G suitable for various applications in consumer electronics, signal processing, and general switching tasks.
Pinout
1. Pin 1: Base (B) - This pin is used to control the transistor's operation. A small current or voltage applied to the base allows control over a larger current flow between the collector and the emitter.
2. Pin 2: Emitter (E) - This pin is the output of the transistor where current flows out. It is typically connected to the ground or a more negative voltage in an NPN transistor.
3. Pin 3: Collector (C) - This pin is the input for the transistor. The current flows into the collector and is controlled by the base current.
This transistor is suitable for low-power switching, amplification, and is widely utilized in various electronic circuits due to its small size and efficiency.