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MJD31CT4G
+NomenclatureTRANS NPN 100V 3A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #MJD31CT4G
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Package TO-252-3
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En stock6391
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 3 A |
| Voltage - Collector Emitter Breakdown(Max) | 100 V |
| Vce Saturation(Max) @ Ib Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff(Max) | 50µA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 10 @ 3A, 4V |
| Power - Max | 1.56 W |
| Frequency - Transition | 3MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
"MJD31CT4G" appears to be a specific code or identifier that may be related to a product, course, software, or other specialized content. Without additional context, it's challenging to provide a detailed introduction. However, if we break down potential interpretations:
1. Product Code: If MJD31CT4G is a product code, it could represent a specific model or version in a series, possibly relating to technology, electronics, or machinery.
2. Course Identifier: In an academic or training context, it might be a course code, where "MJD" could stand for a subject or department, "31" a level or semester, and "CT4G" could indicate a specific module or instructor.
3. Software/Program: It could be a version or update identifier within a software suite, indicating new features or specific functionalities.
For a precise introduction, additional details about the context, field, or purpose of MJD31CT4G would be essential. If you have more information or context, feel free to share for a more targeted response.
1. Product Code: If MJD31CT4G is a product code, it could represent a specific model or version in a series, possibly relating to technology, electronics, or machinery.
2. Course Identifier: In an academic or training context, it might be a course code, where "MJD" could stand for a subject or department, "31" a level or semester, and "CT4G" could indicate a specific module or instructor.
3. Software/Program: It could be a version or update identifier within a software suite, indicating new features or specific functionalities.
For a precise introduction, additional details about the context, field, or purpose of MJD31CT4G would be essential. If you have more information or context, feel free to share for a more targeted response.
Equivalent
The MJD31CT4G is a TO-252 packaged NPN power transistor. Equivalent products include:
1. TIP31CA widely used NPN power transistor with similar current and voltage ratings.
2. BD243C: Another NPN transistor with comparable specifications.
3. 2N3055 Although in a different package (TO-3), it offers similar performance.
4. D44H11A high-current NPN transistor with similar functionality.
Ensure to check the specific electrical characteristics and thermal ratings for compatibility with your application.
1. TIP31CA widely used NPN power transistor with similar current and voltage ratings.
2. BD243C: Another NPN transistor with comparable specifications.
3. 2N3055 Although in a different package (TO-3), it offers similar performance.
4. D44H11A high-current NPN transistor with similar functionality.
Ensure to check the specific electrical characteristics and thermal ratings for compatibility with your application.
Features
The MJD31CT4G is a NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. Some of its key features include:
1. Package Type: It often comes in a DPAK (TO-252) surface-mount package, making it suitable for high-density circuit designs.
2. Voltage and Current Ratings: The transistor can typically handle a collector-emitter voltage of around 100V and a continuous collector current of up to 3A, offering substantial power handling capabilities for a range of applications.
3. Power Dissipation: It usually has a power dissipation capacity of about 20W, which allows it to effectively manage heat in various circuits.
4. Gain: The device offers a decent current gain (h_FE), which is suitable for a wide variety of amplification purposes.
5. Thermal Performance: It includes good thermal characteristics, allowing for reliable performance in diverse temperature conditions.
6. Applications: The MJD31CT4G is used in power management, motor control, and other consumer electronics applications due to its robust performance and reliability.
These features make it a versatile component in electronic circuit design.
1. Package Type: It often comes in a DPAK (TO-252) surface-mount package, making it suitable for high-density circuit designs.
2. Voltage and Current Ratings: The transistor can typically handle a collector-emitter voltage of around 100V and a continuous collector current of up to 3A, offering substantial power handling capabilities for a range of applications.
3. Power Dissipation: It usually has a power dissipation capacity of about 20W, which allows it to effectively manage heat in various circuits.
4. Gain: The device offers a decent current gain (h_FE), which is suitable for a wide variety of amplification purposes.
5. Thermal Performance: It includes good thermal characteristics, allowing for reliable performance in diverse temperature conditions.
6. Applications: The MJD31CT4G is used in power management, motor control, and other consumer electronics applications due to its robust performance and reliability.
These features make it a versatile component in electronic circuit design.
Pinout
The MJD31CT4G is a PNP Bipolar Junction Transistor (BJT) typically used for amplification and switching applications. It is housed in a DPAK package. The device has three pins:
1. Collector (C)
2. Base (B)
3. Emitter (E)
These pins are arranged in a standard configuration for transistors. The primary function of the MJD31CT4G is to control large current loads using a smaller input current via the base pin, making it suitable for applications requiring high current gain.
1. Collector (C)
2. Base (B)
3. Emitter (E)
These pins are arranged in a standard configuration for transistors. The primary function of the MJD31CT4G is to control large current loads using a smaller input current via the base pin, making it suitable for applications requiring high current gain.
Manufacturer
The MJD31CT4G is a transistor manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy-efficient power and signal management, logic, discrete, and custom devices. The company focuses on automotive, industrial, cloud power, and IoT markets, among others, providing key components for improving energy efficiency and performance in electronic systems.
Application
The MJD31CT4G is a medium power bipolar transistor designed for use in a variety of applications. Key application areas include:
1. Switching Circuits: Used in amplifiers and switches for general-purpose applications.
2. Motor Control: Suitable for driving motors and other inductive loads.
3. Power Management: Employed in power regulation and management circuits due to its efficiency.
4. Signal Amplification: Utilized in audio and RF amplification where moderate power handling is required.
5. Consumer Electronics: Commonly found in TVs, radios, and other home appliances for various control purposes.
These applications leverage its capability to handle moderate power levels efficiently.
1. Switching Circuits: Used in amplifiers and switches for general-purpose applications.
2. Motor Control: Suitable for driving motors and other inductive loads.
3. Power Management: Employed in power regulation and management circuits due to its efficiency.
4. Signal Amplification: Utilized in audio and RF amplification where moderate power handling is required.
5. Consumer Electronics: Commonly found in TVs, radios, and other home appliances for various control purposes.
These applications leverage its capability to handle moderate power levels efficiently.
Package
The package type for MJD31CT4G is a surface-mount package designed for power diodes, typically used in high-efficiency, high-speed switching applications. It is part of a series of diodes that are used in power management and automotive environments.
