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IRLMS2002TRPBF
+NomenclatureMOSFET N-CH 20V 6.5A MICRO6
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FabricantTechnologie Infineon
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Pièce fabricant #IRLMS2002TRPBF
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Fiche technique IRLMS2002TRPBF DataSheet
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Package TSOP-6
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En stock2604
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 30mOhm @ 6.5A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 1310 pF @ 15 V |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro6™(SOT23-6) |
Présentation
Description
- IRLMS: This could refer to a particular subject area or system, such as "International Relations and Learning Management System."
- 2002: This might indicate the year the course or system was introduced or updated.
- TRPBF: The acronym could denote a specific focus or specialization within the course, such as "Training Program for Business and Finance."
An introduction to such a course would typically cover foundational concepts, objectives, key themes, and learning outcomes. It would provide students or participants with an overview of what to expect, including the structure, assessment methods, and any required materials or prerequisites. Additionally, it may highlight the relevance and application of the content in real-world scenarios or specific industries.
Equivalent
Features
1. Voltage and Current: It has a maximum drain-source voltage (V_DS) of -20V and a continuous drain current (I_D) of approximately -1.6A, making it suitable for low-voltage applications.
2. R_DS(on): The device typically features a low on-resistance (R_DS(on)) of around 90 mΩ, which reduces power loss and enhances efficiency.
3. Package: It is available in a small and compact SOT-23 package, which is suitable for space-constrained applications.
4. Temperature Range: It operates over a wide temperature range, typically from -55°C to +150°C, offering versatility in various environments.
5. Applications: Commonly used in DC-DC converters, load switches, and battery-powered devices due to its efficient performance and compact size.
6. ESD Protection: The device is designed to withstand electrostatic discharge, enhancing its reliability in sensitive applications.
These features make the IRLMS2002TRPBF a versatile component for efficient power management solutions.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here regulates the current flowing between the drain and source.
2. Drain (D): This pin is where the main current flows from. It is connected to the load in a typical application.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to the ground in most circuit configurations.
This device is commonly used in low voltage switching applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and power supply circuits to efficiently manage voltage and current levels.
2. Motor Control: Drives and controls motors in industrial and consumer electronics, such as fans and pumps.
3. Switching Circuits: Functions as a switch in high-speed communication and signal processing applications.
4. Automotive Systems: Used in automotive electronics for controlling power in systems like lighting and infotainment.
5. Battery Management: Plays a role in battery charging and protection circuits in portable devices.
These applications leverage the MOSFET's high efficiency, fast switching speed, and low on-resistance.