IRLHS2242TRPBF

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IRLHS2242TRPBF

+Nomenclature

MOSFET P-CH 20V 7.2A/15A 6PQFN

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 7.2A (Ta), 15A (Tc)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 31mOhm @ 8.5A, 4.5V
Vgs(th)(Max) @ Id 1.1V @ 10µA
Gate Charge(Qg)(Max) @ Vgs 12 nC @ 10 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 877 pF @ 10 V
Power Dissipation (Max) 2.1W (Ta), 9.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-PQFN (2x2)

Présentation

Description

The IRLHS2242TRPBF is a N-channel HEXFET power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 20V
- Current Rating: 44A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-speed performance
- Package: D2PAK (TO-263), suitable for power applications
Common uses include DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet on Infineon’s website.

Equivalent

Equivalent products to the IRLHS2242TRPBF (30V, 5.3mΩ, 116A MOSFET) include:
- IRLHS6242TRPBF (Similar specs, lower Rds(on))
- IRLHS2242PBF (Same specs, different packaging)
- IRLHS2242TR (Same specs, tape/reel variant)
- IRLHS2242 (Base part number, same parameters)
For alternatives from other brands, consider:
- Infineon IPD90N04S4-04
- Vishay SiR156DP
Check datasheets for exact compatibility.

Features

The IRLHS2242TRPBF is a HEXFET Power MOSFET from Infineon, designed for high-efficiency power applications. Key features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 2.2mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Low Gate Charge (Qg): 48nC (typ) for reduced switching losses
- Avalanche Rated: Robust against inductive spikes
- Package: D2PAK (TO-263) for efficient thermal performance
- Applications: DC-DC converters, motor control, power tools, and battery management.
Compact, efficient, and reliable for high-current designs.

Pinout

The IRLHS2242TRPBF is a dual N-channel MOSFET in a Power-SO8 package with 8 pins.
Key Functions:
- Pins 1, 2, 3 (Gate 1, Drain 1, Source 1): Control and switch one N-channel MOSFET.
- Pins 6, 7, 8 (Gate 2, Drain 2, Source 2): Control and switch the second N-channel MOSFET.
- Pins 4 & 5: Typically connected to the source (GND reference) for thermal and electrical performance.
Features:
- Low on-resistance (RDS(on)) for efficient power switching.
- Logic-level gate drive (compatible with 3.3V/5V signals).
- High current handling (up to ~20A per channel).
Commonly used in DC-DC converters, motor drives, and power management circuits.

Application

The IRLHS2242TRPBF is a 30V, 60A N-channel HEXFET Power MOSFET from Infineon, optimized for high-efficiency, low-voltage applications. Key application areas include:
1. DC-DC Converters – Used in step-down/step-up voltage regulation.
2. Power Management – Efficient switching in battery-powered devices.
3. Motor Control – Drives small motors in robotics and automotive systems.
4. Load Switching – Fast switching in power distribution circuits.
5. Portable Electronics – Enhances efficiency in smartphones, tablets, and laptops.
Its low on-resistance (RDS(on)) and high current handling make it ideal for space-constrained, high-performance designs.

Package

The IRLHS2242TRPBF is a MOSFET housed in a PowerPAK® SO-8 package. This compact surface-mount design offers efficient thermal performance and low on-resistance, suitable for high-density power applications. The package dimensions are standardized for SO-8 footprints, ensuring compatibility with automated assembly processes.

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