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IRLB4132PBF
+NomenclatureIRLB4132 - 12V-300V N-CHANNEL PO
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FabricantRedresseur international
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Pièce fabricant #IRLB4132PBF
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Fiche technique IRLB4132PBF DataSheet
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Package TO-220-3
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En stock4529
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Spécifications
| Attribut | Valeur |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 78A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.5mOhm @ 40A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 54 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5110 pF @ 15 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Présentation
Description
The introduction could outline the primary goals: analyzing theoretical frameworks, understanding geopolitical dynamics, or applying concepts to real-world scenarios. It might also include details about the course format, such as lectures, discussions, or projects, and the assessment methods, like exams, essays, or presentations.
Additionally, students may be encouraged to engage critically with materials, participate in discussions, and develop a nuanced understanding of the subject. Recommended readings and resources may be provided to support the learning process. For accurate details, please refer to the specific course syllabus or contact the relevant academic department directly.
Equivalent
Features
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 30V and can handle continuous drain current (I_D) up to 150A.
2. Low On-Resistance: The MOSFET exhibits a low on-resistance (R_DS(on)) of approximately 3.2 mΩ, which minimizes power losses and enhances efficiency.
3. Fast Switching: It supports fast switching speeds, beneficial for high-frequency applications, leading to reduced switching losses.
4. Package Type: The IRLB4132PBF is commonly available in a TO-220 package, which provides good thermal performance with an efficient heat dissipation design.
5. Logic Level Gate Drive: It can be driven with logic level voltages (V_GS of 4.5V), making it compatible with microcontrollers and other digital circuits.
6. Applications: Ideal for use in power management, motor control, DC-DC converters, and other applications requiring high power handling.
These features make it a versatile choice for various electronics requiring efficient power delivery and management.
Pinout
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the current enters the MOSFET. It is connected to the load in most circuit configurations.
3. Source (S): The source is the terminal through which the current exits the MOSFET. It is typically connected to the ground or the negative side of the power supply in a circuit.
The IRLB4132PBF is renowned for its low on-state resistance, fast switching speed, and high current capacity, which make it suitable for applications such as motor drives, power supplies, and other high-power electronic circuits.
Manufacturer
The IRLB4132PBF itself is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is commonly used in electronic circuits for switching and amplifying electronic signals. MOSFETs like the IRLB4132PBF are integral components in modern electronic systems, enabling efficient and precise control of electrical power.
Application
1. Power Supply Units: Used for switching in AC-DC and DC-DC converters.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Lighting: Utilized in LED drivers and electronic ballasts.
4. Battery Management: Employed in battery protection and charging systems.
5. Renewable Energy Systems: Used in inverters for solar and wind energy applications.
6. Consumer Electronics: Found in power management circuits for devices like televisions and computers.
Its low on-resistance and high current handling capabilities make it ideal for these areas.