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IRFR3910TRPBF
+NomenclatureIRFR3910 - 12V-300V N-CHANNEL PO
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FabricantRedresseur international
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Pièce fabricant #IRFR3910TRPBF
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Fiche technique IRFR3910TRPBF DataSheet
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Package TO-252
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En stock7386
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Spécifications
| Attribut | Valeur |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 16A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 115mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 44 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 640 pF @ 25 V |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Présentation
Description
Key features of the IRFR3910TRPBF include a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of up to 43A, and a low on-resistance (R_DS(on)) of typically 20 mΩ. It comes in a standard TO-252 (D-Pak) surface-mount package, which provides efficient heat dissipation and compactness for space-constrained designs.
The device is also RoHS compliant, signifying its adherence to environmental standards restricting hazardous substances. Its robust performance and reliability make it a popular choice among engineers looking for efficient solutions in various electronic and industrial applications.
Equivalent
1. STMicroelectronics STP90NF03L – N-channel MOSFET with similar voltage and current ratings.
2. ON Semiconductor NTP6410 – Offers comparable performance with a similar package.
3. Infineon IPB042N10N3 G – Also provides similar specifications and performance.
Always verify the specifications and compatibility in your circuit design before substituting components.
Features
1. Voltage and Current: It has a drain-to-source voltage (V_DS) rating of 100V and can handle a continuous drain current (I_D) of up to 40A.
2. R_DS(on): The device offers a low on-state resistance, minimizing power losses and improving efficiency.
3. Package Type: It comes in a compact TO-252 (DPAK) surface-mount package, ensuring ease of integration into designs with space constraints.
4. Temperature Range: It operates over a wide junction temperature range, allowing it to be used in various environments.
5. Lead-Free: The IRFR3910TRPBF is lead-free and RoHS compliant, adhering to environmental and safety standards.
These features make the IRFR3910TRPBF suitable for applications requiring efficient power management and compact design.
Pinout
1. Gate (G): This pin is responsible for controlling the on-off state of the MOSFET. By applying the appropriate voltage to the gate, the user can switch the MOSFET on or off.
2. Drain (D): This pin is where the main current flows out when the MOSFET is in the "on" state. The drain is connected to the load being controlled.
3. Source (S): This is the return path for the main current flowing through the MOSFET. It is usually connected to the ground or the negative side of the power supply in many applications.
These MOSFETs are commonly used in various applications for switching and amplification due to their efficiency and fast switching capabilities.
Manufacturer
Application
1. Power Supply Units: Used in DC-DC converters and power management circuits for efficient power conversion.
2. Motor Drives: Suitable for motor control in industrial and automotive applications due to its ability to handle high current loads.
3. LED Lighting: Offers efficient control in LED drivers and lighting systems.
4. Solar Inverters: Used in photovoltaic inverters for solar energy conversion.
5. Battery Management Systems: Helps in managing charging and discharging cycles efficiently.
6. Telecommunications: Supports power regulation and distribution in network equipment.
These applications benefit from its low on-resistance and fast switching capabilities.