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IRFU9024NPBF
+NomenclatureIRFU9024N - 55V SINGLE P-CHANNEL
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FabricantRedresseur international
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Pièce fabricant #IRFU9024NPBF
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Package IPAK
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En stock5544
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Spécifications
| Attribut | Valeur |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 175mOhm @ 6.6A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 350 pF @ 25 V |
| Power Dissipation (Max) | 38W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
Présentation
Description
Key features of the IRFU9024NPBF include its low on-resistance, which minimizes power loss and heat generation during operation, making it ideal for use in power-sensitive applications. Its P-channel configuration allows for easier control of loads connected to the positive side of the power supply, simplifying circuit design in certain configurations.
The IRFU9024NPBF is typically housed in a TO-251 package, which provides excellent thermal performance and ease of mounting on printed circuit boards. It is especially useful in environments where space is limited but efficient power control is necessary. This MOSFET is commonly used in consumer electronics, automotive systems, and industrial equipment, where durability and performance are crucial.
Equivalent
1. IRF9540N - Similar specifications with slight variations in threshold voltage and current capacity.
2. IRF4905 - Offers comparable voltage and current ratings.
3. FQP27P06 - Matches in power specifications.
4. STP60P06 - Another alternative with similar characteristics.
5. FQP47P06 - Suitable for similar applications.
Always check datasheets for precise specifications and compatibility with your circuit.
Features
1. N-Channel MOSFET: It is an N-channel enhancement mode transistor, which is commonly used for switching and amplification.
2. Low On-Resistance: It has a low on-state resistance, which helps in minimizing power loss and enhancing efficiency.
3. High Current Capacity: The MOSFET can handle high current levels, making it suitable for power-intensive applications.
4. Fast Switching Speed: It offers rapid switching capabilities, which is essential for applications requiring quick response times.
5. Thermal Performance: Designed with good thermal performance to ensure stability under high-temperature conditions.
6. Robust Design: The transistor is built to withstand significant voltage and current stress, ensuring durability.
7. RoHS Compliant: It adheres to guidelines for restriction of hazardous substances, ensuring environmental safety.
These features make the IRFU9024NPBF suitable for a variety of applications, including motor drives, power supplies, and DC-DC converters.
Pinout
1. Gate (G): This terminal is responsible for controlling the MOSFET's conduction state. By applying a voltage, the gate controls the current flow between the source and drain.
2. Drain (D): This is the terminal through which the main current enters the MOSFET when it is conducting.
3. Source (S): This terminal is where the main current exits the MOSFET when it is conducting.
In a P-channel MOSFET like the IRFU9024NPBF, the current flows from the source to the drain when a negative voltage is applied to the gate relative to the source. This MOSFET is used in various applications requiring efficient switching and control of high current loads.