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IRFU5305PBF
+NomenclatureIRFU5305 - 20V-250V P-CHANNEL PO
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FabricantRedresseur international
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Pièce fabricant #IRFU5305PBF
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Fiche technique IRFU5305PBF DataSheet
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Package TO-251-3
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En stock6510
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Spécifications
| Attribut | Valeur |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 31A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 65mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1200 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | IPAK (TO-251AA) |
Présentation
Description
Key features include:
1. Voltage and Current Ratings: The IRFU5305PBF typically supports a maximum drain-source voltage (V_DS) of around -55V and a continuous drain current (I_D) of about -31A.
2. Package Type: It is usually available in a TO-220 package, which facilitates efficient heat dissipation.
3. Low On-Resistance: This MOSFET is designed to offer low on-resistance (R_DS(on)), improving efficiency and reducing power loss during operation.
4. Applications: Suitable for applications like DC/DC converters, battery management systems, and general power switching.
Its robust design and efficient parameters make it a reliable choice for engineers dealing with high-power designs. Always refer to the datasheet for specific technical details and application guidance.
Equivalent
1. FQP27P06 from ON Semiconductor
2. STP80PF55 from STMicroelectronics
3. IPP60P03P4L-04 from Infineon Technologies
It's important to verify electrical specifications and package compatibility when selecting equivalents.
Features
1. Vds Rating: It has a drain-to-source voltage rating of -55V, making it suitable for medium-voltage applications.
2. Current Capacity: It supports a continuous drain current of up to -31A, allowing for substantial current flow in circuits.
3. Rds(on): The on-state resistance is relatively low, typically around 0.08 ohms, enhancing efficiency by reducing power losses.
4. Gate Threshold Voltage: The gate-source threshold voltage ranges from -2V to -4V, ensuring the MOSFET is easily driven by standard logic levels.
5. Package Type: Available in a TO-251 (IPAK) package, which is suitable for through-hole mounting and offers good thermal performance.
6. Temperature Range: It operates within a wide temperature range, making it versatile for different environments.
7. Applications: Commonly used in power management, load switching, and DC-DC converters.
These features make the IRFU5305PBF a reliable choice for engineers seeking a robust P-channel MOSFET for their projects.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying the appropriate voltage to the gate allows current to flow between the drain and source.
2. Drain (D): Current enters the MOSFET through the drain when it is in the "on" state.
3. Source (S): Current exits the MOSFET through the source. For a P-channel MOSFET, the current flows from source to drain.
The IRFU5305PBF is commonly used for switching applications and power management due to its ability to handle high current and voltage levels.
Manufacturer
Application
1. Load Switching: Controls power delivery to various components in electronic devices.
2. DC-DC Converters: Facilitates voltage regulation in power supply circuits.
3. Battery Management: Helps in charging and discharging control within battery-operated devices.
4. Motor Control: Manages motor operation in automotive and industrial applications.
5. Inverters: Used in solar inverters and UPS systems for efficient energy conversion.
Its low on-resistance and high current capacity make it suitable for high-efficiency and compact power designs.