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IRFU4510PBF
+NomenclatureMOSFET N-CH 100V 56A IPAK
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FabricantRedresseur international
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Pièce fabricant #IRFU4510PBF
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Fiche technique IRFU4510PBF DataSheet
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En stock7877
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Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 56A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 13.9mOhm @ 38A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 81 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3031 pF @ 50 V |
| Power Dissipation (Max) | 143W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
