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IRFS7530TRLPBF
+NomenclatureMOSFET N CH 60V 195A D2PAK
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FabricantTechnologie Infineon
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Pièce fabricant #IRFS7530TRLPBF
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Fiche technique IRFS7530TRLPBF DataSheet
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En stock3116
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 2mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.7V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 411 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 13703 pF @ 25 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-2 |
Présentation
Description
- Voltage Rating: 30V
- Current Rating: 120A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (max)
- Package: PQFN 5x6mm (OptiMOS™)
- Applications: Synchronous rectification, DC-DC converters, motor drives, and power management in servers, telecom, and industrial systems.
Its low conduction losses and fast switching make it ideal for high-current, high-frequency designs. The PQFN package enhances thermal performance, supporting efficient heat dissipation.
For detailed specs, refer to the datasheet on Infineon’s website.
Equivalent
- IRFS7530-7PPBF (same specs, different package)
- IRFS7530TRL7PBF (similar, lower Rds(on))
- AUIRFS7530-7P (Infineon alternative)
- STL160N3LLH6 (STMicroelectronics, comparable specs)
- BSC030N03LS (Infineon, similar performance)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 40V
- Current Rating: 120A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with 5V drive (VGS(th) = 1V min)
- Package: D2PAK (TO-263) for high power dissipation
- Avalanche Energy Rated: Robust against inductive spikes
- Low Gate Charge (Qg): Enhances switching performance
- Applications: DC-DC converters, motor drives, and power management
Designed for high-current, low-loss performance in compact designs.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current input (connected to the load).
3. Source (S) – Main current output (connected to ground).
Key Features:
- N-channel MOSFET
- VDS: 100V
- ID: 75A (continuous)
- RDS(on): 9.3mΩ (max at 10V VGS)
- Logic-level gate drive (compatible with 5V/10V signals).
Commonly used in power switching applications like motor drives, DC-DC converters, and power supplies.
Manufacturer
Application
1. Switching Power Supplies – Efficient DC-DC conversion in SMPS.
2. Motor Control – Drives motors in industrial and automotive systems.
3. LED Lighting – Powers high-efficiency LED drivers.
4. Battery Management – Used in charging/discharging circuits.
5. Solar Inverters – Converts DC to AC in renewable energy systems.
Its low on-resistance (RDS(on)) and high current handling make it ideal for high-efficiency, high-power applications.
