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IRFR5410PBF
+NomenclatureMOSFET P-CH 100V 13A DPAK
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FabricantTechnologie Infineon
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Pièce fabricant #IRFR5410PBF
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Fiche technique IRFR5410PBF DataSheet
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Package TO-252-3
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 205mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 58 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 760 pF @ 25 V |
| PowerDissipation(Max) | 66W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
Présentation
Equivalent
- IRFR5410TRPBF (same specs, tape & reel packaging)
- IRFR5410PbF (lead-free variant)
- IRF9Z34N (similar specs, -55V, -19A)
- IRF4905 (-55V, -74A, higher current)
- STP80PF55 (-55V, -80A, higher current)
Check datasheets for exact compatibility in your circuit.
Pinout
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Specs:
- VDS: -100V (P-Channel)
- ID: -23A (continuous)
- RDS(on): 0.077Ω (max @ VGS = -10V)
Used in power switching, DC-DC converters, and motor control.
Application
1. Power Management – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge circuits, driver modules.
3. Load Switching – Power distribution in automotive, industrial systems.
4. Battery Protection – Reverse polarity and discharge control.
5. Consumer Electronics – Power supplies, inverters, and portable devices.
Its low on-resistance (RDS(on)) and high current handling (up to 23A) make it suitable for efficient power switching.