Images à titre indicatif uniquement
IRFR5305TRPBF
+NomenclatureMOSFET P-CH 55V 31A DPAK
-
FabricantTechnologie Infineon
-
Pièce fabricant #IRFR5305TRPBF
-
Fiche technique IRFR5305TRPBF DataSheet
-
Package TO-252-3
-
En stock5161
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 31A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 65mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1200 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
Présentation
Description
- Voltage Rating: 55V
- Current Rating: 31A (continuous)
- Low On-Resistance (RDS(on)): 22mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed performance
- Package: TO-252 (DPAK), surface-mountable
Common applications include power supplies, motor control, DC-DC converters, and load switching. Its low RDS(on) minimizes conduction losses, improving efficiency. The device is RoHS-compliant and suitable for industrial, automotive, and consumer electronics.
For detailed specs, refer to the datasheet.
Equivalent
- IRFR5305PBF (same specs, different packaging)
- IRF4905PBF (similar P-channel, 55V, 74A)
- FQP27P06 (P-channel, 60V, 27A)
- STP55P06FP (P-channel, 60V, 55A)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: -55V (Drain-to-Source, VDSS)
- Current Rating: -31A (Continuous Drain Current, ID)
- Low On-Resistance: 44mΩ (RDS(on)) at VGS = -10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with -10V gate drive (VGS)
- Package: TO-252 (DPAK), surface-mount
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves ruggedness
Ideal for power management, DC-DC converters, motor control, and load switching.
Pinout
1. Gate (G) – Controls the MOSFET's switching.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- VDS: 55V
- ID: 31A (continuous)
- Low RDS(on): 0.06Ω (max at VGS = 10V)
- Logic-level compatible (VGS threshold ~2-4V)
Common Uses: Power switching, motor control, DC-DC converters.
Application
1. Power Management – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge circuits, servo drives.
3. Load Switching – Battery protection, power distribution.
4. Inverters & Converters – Solar inverters, UPS systems.
5. Automotive Electronics – LED drivers, ECU power control.
Its low on-resistance (RDS(on)) and high current handling (31A) make it suitable for efficient power switching in compact designs.