IRFR3711ZTRPBF

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IRFR3711ZTRPBF

+Nomenclature

IRFR3711 - 12V-300V N-CHANNEL PO

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Spécifications

Attribut Valeur
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 93A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 5.7mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 2.45V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 27 nC @ 4.5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2160 pF @ 10 V
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak

Présentation

Description

IRFR3711ZTRPBF is an N-channel enhancement-mode power MOSFET from IR/Infineon. It’s intended for low-voltage, high-current switching applications such as DC-DC converters, motor drivers, and load switches. The device offers a 30 V (typical) drain‑source rating with a very low on-resistance (Rds(on) in the milliohm range), enabling low conduction losses at high currents. Gate drive can be at common logic‑level voltages (Rds(on) specified at Vgs=4.5 V and 10 V), making it compatible with microcontroller or gate-driver outputs. It features fast switching, good ruggedness for switching applications, and Pb-free RoHS-compliant packaging (suffix PBF in a ZTR package). Typical uses include synchronous buck converters, switching regulators, and automotive electronics. For exact Vds, Id, Rds(on), and pinout, refer to the official datasheet.

Features

IRFR3711ZTRPBF features (concise):
- N-channel enhancement-mode power MOSFET
- 30 V class device with very low on-resistance for high efficiency
- Trench/advanced oxide structure for fast switching and low gate charge
- Logic-level capable gate drive (suitable for ~4.5–10 V drive)
- Robust switching margins: avalanche-rated and high pulsed-current capability
- Good short-circuit tolerance and thermal performance
- Pb-free, RoHS-compliant packaging (ZTRPBF, surface-mount)
- Ideal for synchronous DC-DC converters, motor control, high-efficiency switching applications
Note: for exact Rds(on), Vds, gate threshold ranges, and package type, refer to the datasheet.

Pinout

IRFR3711ZTRPBF is a 3-lead N-channel enhancement-mode power MOSFET (TO-252/DPAK style). Pinout: pin 1 = Gate, pin 2 = Drain, pin 3 = Source; the drain is also connected to the metal tab. Used as a high-current switching device in power electronics.

Manufacturer

Manufacturer: Infineon Technologies AG (the IR prefix originally came from International Rectifier, which Infineon acquired in 2015).
What kind of company: Infineon is a German multinational semiconductor manufacturer and one of the world's leading suppliers of power semiconductors, offering devices and system solutions for automotive, industrial, power, and security applications.

Application

IRFR3711ZTRPBF is a high-speed, low Rds(on) N-channel MOSFET. Suitable applications include:
- Switching regulators (DC–DC converters, buck/boost, synchronous rectification)
- Motor drivers (DC motors, stepper, brushless with controllers)
- Power adapters, UPS, telecom/industrial power supplies
- Solar inverters and MPPT front-ends
- LED driver stages and lighting power supplies
- Battery-powered portable electronics power management
- Other low-voltage, high-current switching circuits (where ratings are met)

Package

D2PAK (TO-263) package, Pb-free (PBF), typically supplied in tape-and-reel.

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