IRFP4227PBF

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IRFP4227PBF

+Nomenclature

IRFP4227 - 12V-300V N-CHANNEL PO

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Spécifications

Attribut Valeur
Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 65A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 25mOhm @ 46A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 98 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4600 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Présentation

Description

The IRFP4227PBF is a N-channel power MOSFET from Infineon Technologies, designed for high-power applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 78A (continuous)
- Low On-Resistance (RDS(on)): 6.5 mΩ (max at 10V VGS)
- Fast Switching: Suitable for high-frequency circuits
- Package: TO-247AC (through-hole, robust thermal performance)
Commonly used in switching power supplies, motor drives, and inverters, it offers efficient power handling with minimal conduction losses. The PBF suffix indicates lead-free (RoHS-compliant) construction.
For optimal performance, ensure proper gate drive voltage (10V recommended) and heat dissipation due to high current capability. Always refer to the datasheet for detailed specifications.

Equivalent

Equivalent products to the IRFP4227PBF (200V, 82A, N-channel MOSFET) include:
- IRFP4242PBF (200V, 98A)
- IRFP4368PBF (150V, 130A)
- IRFP4668PBF (200V, 130A)
- STP80NF20 (200V, 80A, STMicroelectronics)
- FDP3682 (200V, 84A, ON Semiconductor)
Check datasheets for exact specs and pin compatibility.

Features

The IRFP4227PBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 78A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max) @ VGS=10V
- Fast Switching: Suitable for high-efficiency applications
- Avalanche Energy Rated: Robust against voltage spikes
- TO-247 Package: High power dissipation capability
- Gate Charge (Qg): 150nC (typical)
Ideal for power supplies, motor drives, and inverters due to its high current handling and low conduction losses.

Pinout

The IRFP4227PBF is a TO-247AC packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-current output terminal.
3. Source (S) – Ground/reference terminal.
Key Features:
- 175V VDSS (Drain-Source Voltage)
- 195A ID (Continuous Drain Current)
- Low RDS(on) (1.7mΩ max @ 10V VGS)
- Power switching applications (motor drives, inverters, etc.)
Designed for high-power efficiency and fast switching.

Application

The IRFP4227PBF, a high-power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient power conversion in SMPS and DC-DC converters.
2. Motor Control – Drives motors in industrial, automotive, and robotics applications.
3. Audio Amplifiers – High-current output stages in Class-D amplifiers.
4. Renewable Energy Systems – Inverters for solar and wind power systems.
5. Welding Equipment – High-current switching in arc and induction welders.
6. UPS Systems – Ensures reliable power backup with fast switching.
Its high voltage (200V) and current (78A) ratings make it ideal for robust, high-performance applications.

Package

The IRFP4227PBF is packaged in a TO-247AC (also called TO-247-3) through-hole package. This package is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. It provides efficient heat dissipation due to its large size and metal tab.

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