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IRFP250NPBF
+NomenclatureMOSFET N-CH 200V 30A TO247AC
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FabricantTechnologie Infineon
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Pièce fabricant #IRFP250NPBF
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Fiche technique IRFP250NPBF DataSheet
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Package TO-247
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En stock1318
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 75mOhm @ 18A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 123 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2159 pF @ 25 V |
| PowerDissipation(Max) | 214W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
Présentation
Description
- Voltage Rating: 200V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): 0.075Ω (max)
- High Power Handling: Up to 190W
- Fast Switching: Suitable for PWM and motor control
It operates in a TO-247 package, ensuring efficient heat dissipation. Common applications include:
- Switching power supplies
- Motor drives
- Inverters
- Audio amplifiers
The NPBF suffix indicates lead-free (RoHS-compliant) construction. Its robust design and high efficiency make it ideal for demanding circuits. Always refer to the datasheet for thermal and electrical limits.
Equivalent
- IRFP250N (same specs, different packaging)
- IRFP260N (higher current, 50A, 0.055Ω)
- IRFP264N (300V, 38A, 0.067Ω)
- STP80NF55-06 (55V, 80A, 0.006Ω)
- FQP30N06L (60V, 32A, 0.035Ω)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 200V
- Current Rating: 30A (continuous)
- Power Dissipation: 190W
- Low On-Resistance (RDS(on)): 0.075Ω (max at VGS = 10V)
- Fast Switching Speed: Suitable for high-frequency applications
- Avalanche Energy Rated: Enhances ruggedness
- TO-247 Package: Robust thermal performance
- Gate Charge (Qg): 120nC (typical)
- Applications: Switching power supplies, motor drives, inverters
This MOSFET is designed for high-power, high-efficiency applications with reliable performance.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-voltage/current terminal (connected to load).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDSS: 200V
- ID: 30A (continuous)
- RDS(on): 85mΩ (max)
- Power Dissipation: 190W
Commonly used in power switching, inverters, and motor control applications.
Application
1. Power Supplies – Switching regulators, inverters, and DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors in industrial and automotive systems.
3. Audio Amplifiers – High-power Class-D amplifier designs.
4. Renewable Energy – Solar inverters and wind power systems.
5. Industrial Equipment – Welding machines, UPS systems, and induction heating.
Its high current (30A) and voltage (200V) handling make it suitable for high-efficiency switching applications.