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IRFI540NPBF
+NomenclatureMOSFET N-CH 100V 20A TO220AB FP
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FabricantTechnologie Infineon
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Pièce fabricant #IRFI540NPBF
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Fiche technique IRFI540NPBF DataSheet
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Package TO-220
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En stock4779
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 52mOhm @ 11A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 94 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1400 pF @ 25 V |
| Power Dissipation (Max) | 54W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB Full-Pak |
Présentation
Description
The IRFI540NPBF is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in high-speed switching applications, such as inverters, motor drives, and power supplies. It is part of the HEXFET® Power MOSFET series produced by Infineon Technologies.
Key features of the IRFI540NPBF include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of about 33A, making it suitable for medium-power applications.
2. R_DS(on): It has a relatively low on-state resistance, ensuring efficient operation with minimal power loss during conduction.
3. Package Type: The device is usually available in a TO-220 package, which is standard for power transistors and provides effective heat dissipation.
4. High-Speed Performance: Designed for fast switching, it reduces switching losses and improves the overall efficiency of the system.
Overall, the IRFI540NPBF is a versatile and efficient component used widely in various electronic applications requiring reliable high-speed switching.
Key features of the IRFI540NPBF include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of about 33A, making it suitable for medium-power applications.
2. R_DS(on): It has a relatively low on-state resistance, ensuring efficient operation with minimal power loss during conduction.
3. Package Type: The device is usually available in a TO-220 package, which is standard for power transistors and provides effective heat dissipation.
4. High-Speed Performance: Designed for fast switching, it reduces switching losses and improves the overall efficiency of the system.
Overall, the IRFI540NPBF is a versatile and efficient component used widely in various electronic applications requiring reliable high-speed switching.
Equivalent
Equivalent products for the IRFI540NPBF, a N-channel MOSFET, include:
1. STP55NF06from STMicroelectronics
2. FQP50N06 from ON Semiconductor
3. P55NF06 from STMicroelectronics
4. NDP6060L from ON Semiconductor
5. FDP6035AL from Fairchild Semiconductor
These equivalents should be verified for specific parameters and application requirements, such as voltage and current ratings, before substitution.
1. STP55NF06from STMicroelectronics
2. FQP50N06 from ON Semiconductor
3. P55NF06 from STMicroelectronics
4. NDP6060L from ON Semiconductor
5. FDP6035AL from Fairchild Semiconductor
These equivalents should be verified for specific parameters and application requirements, such as voltage and current ratings, before substitution.
Features
The IRFI540NPBF is an N-channel MOSFET designed for use in applications requiring efficient switching and amplification. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 27A.
2. R_DS(ON): The on-resistance is approximately 0.077 ohms, making it suitable for applications requiring low power loss.
3. Fast Switching: This MOSFET is capable of fast switching speeds, enhancing performance in high-frequency applications.
4. Thermal Performance: It is encapsulated in a TO-220 package, which helps with efficient heat dissipation and allows for use with heat sinks to manage thermal performance.
5. Enhanced Ruggedness: The device is designed to handle high-energy pulses in avalanche and commutation modes, ensuring durability and reliability.
6. Applications: Suitable for power management, motor control, DC-DC converters, and other general-purpose switching applications.
These features make the IRFI540NPBF a versatile component in various electronic designs requiring reliable power handling capabilities.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 27A.
2. R_DS(ON): The on-resistance is approximately 0.077 ohms, making it suitable for applications requiring low power loss.
3. Fast Switching: This MOSFET is capable of fast switching speeds, enhancing performance in high-frequency applications.
4. Thermal Performance: It is encapsulated in a TO-220 package, which helps with efficient heat dissipation and allows for use with heat sinks to manage thermal performance.
5. Enhanced Ruggedness: The device is designed to handle high-energy pulses in avalanche and commutation modes, ensuring durability and reliability.
6. Applications: Suitable for power management, motor control, DC-DC converters, and other general-purpose switching applications.
These features make the IRFI540NPBF a versatile component in various electronic designs requiring reliable power handling capabilities.
Pinout
The IRFI540NPBF is a N-channel MOSFET transistor manufactured by International Rectifier, now part of Infineon Technologies. It typically comes in a TO-220 package and has three pins:
1. Gate (G): Used to control the MOSFET. When a voltage is applied to the gate, it creates an electric field that allows current to flow between the drain and source.
2. Drain (D): The terminal through which the controlled current flows from the drain to the source when the gate is activated.
3. Source (S): The terminal through which the current exits the MOSFET.
The IRFI540NPBF is designed for high-speed switching applications and capable of handling high current and voltage levels, making it suitable for use in power management, motor drives, and other electronic applications.
1. Gate (G): Used to control the MOSFET. When a voltage is applied to the gate, it creates an electric field that allows current to flow between the drain and source.
2. Drain (D): The terminal through which the controlled current flows from the drain to the source when the gate is activated.
3. Source (S): The terminal through which the current exits the MOSFET.
The IRFI540NPBF is designed for high-speed switching applications and capable of handling high current and voltage levels, making it suitable for use in power management, motor drives, and other electronic applications.
Manufacturer
The IRFI540NPBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company that develops, manufactures, and markets a wide range of semiconductor solutions. These solutions include power semiconductors, microcontrollers, sensors, and security products used across various industries such as automotive, industrial, consumer electronics, and communication. Infineon's products are known for their innovation, quality, and reliability, helping to improve energy efficiency, mobility, and security in electronic devices.
Application
The IRFI540NPBF is a N-channel MOSFET commonly used in various applications due to its high efficiency and reliability. Key application areas include:
1. Power Supplies: Used in switching power supplies and converters for efficient power management.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Load Switching: Utilized in DC-DC converters and for controlling high-current loads.
4. Audio Amplifiers: Employed in Class D amplifiers for its fast switching characteristics.
5. Lighting Systems: Used in LED drivers and ballast circuits for efficient lighting control.
6. Battery Management: Essential in battery protection circuits for energy storage systems.
Its robust performance makes it ideal for these varied applications.
1. Power Supplies: Used in switching power supplies and converters for efficient power management.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Load Switching: Utilized in DC-DC converters and for controlling high-current loads.
4. Audio Amplifiers: Employed in Class D amplifiers for its fast switching characteristics.
5. Lighting Systems: Used in LED drivers and ballast circuits for efficient lighting control.
6. Battery Management: Essential in battery protection circuits for energy storage systems.
Its robust performance makes it ideal for these varied applications.
Package
The IRFI540NPBF is a power MOSFET packaged in a TO-220 full-pack type. This package provides good thermal performance and electrical insulation, commonly used for medium-power applications in electronics.
