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IRFH8337TRPBF
+NomenclatureMOSFET N-CH 30V 12A/35A PQFN
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FabricantRedresseur international
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Pièce fabricant #IRFH8337TRPBF
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Fiche technique IRFH8337TRPBF DataSheet
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Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Ta), 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 12.8mOhm @ 16.2A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 790 pF @ 10 V |
| Power Dissipation (Max) | 3.2W (Ta), 27W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (5x6) |
