IRFH5300TRPBF

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IRFH5300TRPBF

+Nomenclature

MOSFET N-CH 30V 40A/100A 8PQFN

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 40A (Ta), 100A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 1.4mOhm @ 50A, 10V
Vgs(th)(Max) @ Id 2.35V @ 150µA
Gate Charge(Qg)(Max) @ Vgs 120 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 7200 pF @ 15 V
Power Dissipation (Max) 3.6W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)

Présentation

Description

The IRFH5300TRPBF is a N-channel HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 104A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: PQFN 5x6mm (PowerQFN), improving thermal performance
### Applications:
- DC-DC Converters
- Motor Control
- Power Supplies
- Battery Management
### Advantages:
- High current handling with minimal power loss
- Compact, thermally efficient package
- Suitable for space-constrained designs
Ideal for automotive, industrial, and consumer electronics requiring robust power management.

Equivalent

Equivalent products to the IRFH5300TRPBF (30V N-channel MOSFET) include:
- IRFH5300PBF (same specs, different packaging)
- IRF7470PBF (similar 30V, lower Rds(on))
- Si7850DP-T1-GE3 (Vishay alternative)
- CSD17313Q3 (TI alternative, 30V)
Check datasheets for exact compatibility in your application.

Features

The IRFH5300TRPBF is a 30V N-channel HEXFET Power MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 100A (continuous) at 25°C
- Low On-Resistance (RDS(on)): 1.7mΩ max at VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Gate Charge (Qg): 110nC typical (VGS = 10V)
- Avalanche Energy Rated: Robust against inductive spikes
- Package: PQFN 5x6mm, thermally enhanced for better heat dissipation
- Logic-Level Gate Drive: Compatible with 4.5V drive (higher RDS(on))
- Applications: DC-DC converters, motor drives, power tools, and battery management
Designed for high-current, low-loss switching in compact designs.

Manufacturer

The IRFH5300TRPBF is manufactured by Infineon Technologies, a German semiconductor company. Infineon specializes in power management, automotive, and industrial electronics, known for high-performance MOSFETs and other semiconductor solutions. The company was spun off from Siemens in 1999 and is a leader in energy-efficient technologies.
The IRFH5300TRPBF is a Power MOSFET designed for high-efficiency switching applications, commonly used in power supplies, motor control, and DC-DC converters.

Package

The IRFH5300TRPBF is a Power MOSFET housed in a PQFN (Power Quad Flat No-Leads) package, specifically the 5x6 mm PQFN variant. This surface-mount package offers efficient thermal performance and compact size, suitable for high-power applications. Key features include exposed pads for enhanced heat dissipation and low-profile design.

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