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IRFB7730PBF
+NomenclatureMOSFET N-CH 75V 195A TO220AB
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FabricantTechnologie Infineon
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Pièce fabricant #IRFB7730PBF
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Fiche technique IRFB7730PBF DataSheet
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Package TO-220-3
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En stock3203
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain(Id) @ 25°C | 195A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 2.6mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.7V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 407 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 13660 pF @ 25 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Présentation
Description
- Voltage Rating: 30V
- Current Rating: 180A (pulsed), 90A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (max at 10V VGS)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor drives, and power supplies
- Package: TO-220AB (through-hole)
It operates with a gate threshold voltage (VGS(th)) of 2-4V, making it compatible with logic-level drivers. Its low conduction losses and high current handling suit demanding applications like battery management, inverters, and industrial systems.
Applications:
- High-current switching
- Power conversion
- Motor control
- Solar inverters
Pros: High efficiency, robust thermal performance.
Cons: Requires proper heat sinking at high currents.
A reliable choice for high-performance power electronics.
Equivalent
- IRFB7430PBF (100V, 30A)
- IRFB7437PBF (100V, 30A)
- IRFB7545PBF (100V, 30A)
- STP80NF10 (100V, 80A) – Higher current rating
- AUIRFB7730 (100V, 30A) – Auto-grade variant
Check datasheets for exact specs and pin compatibility.
Features
- Voltage Rating: 100V
- Current Rating: 180A (pulsed), 75A (continuous)
- Low On-Resistance (RDS(on)): 3.3 mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Gate Charge (Qg): 170nC (typical)
- Avalanche Energy Rated: Robust for inductive loads
- Package: TO-220AB (through-hole, easy mounting)
- Applications: Motor drives, DC-DC converters, inverters, and high-power switching
This MOSFET is designed for high-current, high-voltage applications with low conduction losses. Its low RDS(on) and fast switching make it suitable for demanding power electronics.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- VDS: 100V
- ID: 180A (pulsed)
- Low RDS(on): 1.7mΩ (max at 10V VGS)
- Applications: High-power switching (motor drives, inverters, power supplies).
The TO-220AB package includes a metal tab for heat dissipation.
Application
1. Switching Power Supplies – Efficient energy conversion in AC/DC and DC/DC systems.
2. Motor Drives – Controls motors in industrial, automotive (e.g., EVs), and robotics applications.
3. Solar Inverters – Converts DC from solar panels to AC with minimal losses.
4. UPS Systems – Ensures reliable power backup in data centers and critical infrastructure.
5. Welding Equipment – Provides high-current switching for arc welding machines.
Its low on-resistance (RDS(on)) and high current handling (up to 210A) make it ideal for high-efficiency, high-power applications.
