IRFB3207PBF

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IRFB3207PBF

+Nomenclature

MOSFET N-CH 75V 170A TO220AB

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Spécifications

Attribut Valeur
Package Bulk,Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 170A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.5mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 260 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7600 pF @ 50 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Présentation

Description

The IRFB3207PBF is a N-channel MOSFET from Infineon Technologies, designed for high-power applications. Key features include:
- Voltage Rating: 75V
- Current Rating: 210A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 3.7mΩ (max at 10V VGS)
- Fast Switching: Suitable for motor control, power supplies, and inverters
- Package: TO-220AB (through-hole)
It operates with a gate threshold voltage (VGS(th)) of 2-4V and is optimized for efficiency and thermal performance. Common uses include DC-DC converters, automotive systems, and industrial drives.
For best performance, ensure proper heat sinking and gate drive voltage (≥10V recommended).

Equivalent

Equivalent products to the IRFB3207PBF (100V, 210A MOSFET) include:
- IRFB3206PBF (similar specs, slightly lower current)
- IRFB3307PBF (higher voltage, lower current)
- IRFB4110PBF (higher voltage/current)
- STP160N10F7 (STMicroelectronics alternative)
- AUIRFB3207 (same specs, different package)
Check datasheets for exact compatibility in your application.

Features

The IRFB3207PBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 75V
- Current Rating: 210A (pulsed), 120A (continuous)
- Low On-Resistance (RDS(on)): 3.3 mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high efficiency
- Gate Charge (Qg): 170nC (typical)
- Avalanche Energy Rated: Robust against inductive loads
- Package: TO-220AB (through-hole)
- Applications: Power supplies, motor control, DC-DC converters
Designed for high-power, low-loss switching, it’s ideal for demanding industrial and automotive uses.

Application

The IRFB3207PBF, a high-power N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, brushless DC motor drives.
3. Inverters – Solar inverters, UPS systems.
4. Automotive – Electric vehicle power systems, battery management.
5. Industrial Equipment – High-current switching applications.
Its low on-resistance (1.8 mΩ) and high current rating (210A) make it ideal for efficient power handling in demanding environments.

Package

The IRFB3207PBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for power applications due to its robust thermal performance and ease of mounting on heat sinks. The TO-220AB features three leads (gate, drain, source) and a metal tab for heat dissipation, making it suitable for high-current and high-voltage applications.

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