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IRF8788TRPBF
+NomenclatureMOSFET N-CH 30V 24A 8SO
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FabricantTechnologie Infineon
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Pièce fabricant #IRF8788TRPBF
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Fiche technique IRF8788TRPBF DataSheet
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Package SOIC-8
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En stock1466
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 24A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2.8mOhm @ 24A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 66 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5720 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
Présentation
Description
Key features of the IRF8788TRPBF include a low gate charge, which reduces power loss during switching, and a high current-carrying capability, which enhances performance in demanding situations. It typically comes in a surface-mount package (like the TO-252) for easy integration into printed circuit boards.
The device operates efficiently over a wide range of voltages, typically up to 30V, and can handle high current levels, making it versatile for various power electronics applications. Additionally, it is designed to offer robustness against thermal and electrical stresses, ensuring reliability and longevity in operation.
Equivalent
1. AOT428 from Alpha & Omega Semiconductor
2. FDD8447L from ON Semiconductor
3. IPP200N15N3 G from Infineon Technologies
4. SI4470DY from Vishay
5. NTD5867NL from ON Semiconductor
These alternatives can vary slightly in specifications, so always verify compatibility with your specific application.
Features
1. Voltage and Current Ratings: It typically has a maximum drain-source voltage (V_DS) of around 30V and can handle continuous current up to approximately 104A.
2. Low On-Resistance: Designed to provide low R_DS(on), enhancing efficiency by minimizing power losses during operation.
3. Fast Switching: Capable of high-speed switching which is beneficial for applications requiring quick response times.
4. Thermal Performance: Comes in a D-Pak package which offers good thermal performance, aiding in effective heat dissipation.
5. Robust and Reliable: Built to withstand harsh conditions, ensuring reliability in demanding environments.
6. Applications: Suitable for use in DC-DC converters, motor control circuits, and various power management applications.
These features make the IRF8788TRPBF a versatile choice for designers aiming for efficiency and reliability in power electronic systems.
Pinout
The function of the IRF8788TRPBF is to act as an electronic switch or amplifier. It is designed for high-efficiency power management applications, such as DC-DC converters and motor controllers. The MOSFET operates by using a gate signal to control the flow of current between the source and drain terminals. This particular model is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-current and high-frequency applications.
For precise mounting and connection details, it is essential to refer to the datasheet for the specific configuration and footprint, as it will include detailed schematics and usage guidelines.
Manufacturer
Application
1. Power Supply Units: Used in DC-DC converters and switch-mode power supplies due to its high efficiency.
2. Motor Control: Suitable for driving motors in industrial and consumer applications.
3. Automotive Systems: Utilized in electronic control units for efficient power management.
4. Uninterruptible Power Supplies (UPS): Helps in battery management and power conversion processes.
5. Renewable Energy Systems: Employed in solar inverters and wind turbine systems for efficient energy conversion.
These applications leverage its low on-resistance and fast switching capabilities.