IRF7503TR

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IRF7503TR

+Nomenclature

MOSFET 2N-CH 30V 2.4A MICRO8

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Spécifications

Attribut Valeur
Supplier Infineon Technologies
Package Cut Tape (CT)
ProductStatus Obsolete
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 2.4A
RdsOn(Max)@IdVgs 135mOhm @ 1.7A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 12nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 210pF @ 25V
Power-Max 1.25W
MountingType Surface Mount
Package/Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Présentation

Description

IRF7503TR is a power MOSFET from International Rectifier (now Infineon). It is an N-channel enhancement‑mode device intended for fast-switching power‑electronics applications such as DC‑DC converters, motor drives, and synchronous rectification. The device is typically offered in a tape‑and‑reel (TR) packaging variant and is designed for compact, automated assembly.
Key points:
- N‑channel MOSFET for switching apps
- Low on‑resistance and fast switching for efficiency
- Packaging variant denoted by TR (tape/ reel)
- Real electrical specs (Vds, Id, Rds(on), gate charge, thermal resistance, SOA) vary by exact variant; check the datasheet for the precise values
For proper use, drive the gate with an appropriate Vgs, ensure adequate heat sinking, and observe the maximum Vds, Id, and Safe Operating Area. For exact ratings and characteristics, consult the IRF7503TR datasheet.

Features

IRF7503TR is an N-channel enhancement-mode power MOSFET. Key features include:
- VDS: 75 V
- Continuous drain current: in the low-to-mid amperes range
- Very low on-resistance (RDS(on)) for high-efficiency operation (tens of milliohms)
- Fast switching suitable for switching regulators and PWM applications
- Rugged avalanche energy capability
- Integrated body diode
- Gate threshold in a few volts range (typical, with drive requiring appropriate VGS for specified RDS)
- Packaging: surface-mount DPAK/TO-252 style (TR = Tape & Reel)
- Pb-free, RoHS compliant
These features make it suitable for power-management, motor control, and general switching applications where a moderate-voltage, low-to-mid current MOSFET is needed. For exact electrical values (Id, RDS(on) at a given VGS, switching times), refer to the official datasheet.

Pinout

- Pin count: 3 leads (plus a Drain tab).
- Function: Power MOSFET (enhancement-mode) used for switching in power circuits.
- Typical pinout: Pin 1 = Gate (G), Pin 2 = Drain (D) (also the tab), Pin 3 = Source (S).

Manufacturer

- Manufacturer: International Rectifier (IR), now part of Infineon Technologies.
- What kind of company: A semiconductor company that designs and manufactures power electronics components (e.g., MOSFETs, diodes, IGBTs, power modules). Infineon is a German multinational semiconductor producer.

Application

IRF7503TR is a low‑voltage N‑channel power MOSFET. Common applications include:
- DC‑DC switching regulators (buck/boost) and synchronous rectification
- Power‑management circuits in PCs, servers, telecom and consumer electronics
- PWM motor drives for DC and stepper motors
- Solar charge controllers and small inverters
- Automotive/industrial power switches, load switches, and pre‑regulators
- Hot‑swap and protection circuitry in power supplies
Note: TR indicates tape‑and‑reel packaging for automated assembly.

Package

IRF7503TR comes in a D2PAK (TO-263) surface-mount package.

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