IRF7342PBF

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IRF7342PBF

+Nomenclature

MOSFET 2P-CH 55V 3.4A 8-SOIC

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Spécifications

Attribut Valeur
Package Tube
Series HEXFET®
ProductStatus Discontinued at Digi-Key
FETType 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 55V
Current-ContinuousDrain(Id)@25°C 3.4A
RdsOn(Max)@IdVgs 105mOhm @ 3.4A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 38nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 690pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Présentation

Description

The IRF7342PBF is a dual N-channel and P-channel MOSFET in a single SO-8 package, designed by Infineon Technologies. It combines a 30V N-channel (IRF7342) and a -30V P-channel (IRF7342) MOSFET, making it ideal for synchronous buck converters, motor drives, and power management applications.
### Key Features:
- Voltage Ratings: 30V (N-channel), -30V (P-channel).
- Current Ratings: 4.3A (N-channel), -3.7A (P-channel).
- Low On-Resistance: 50mΩ (N-channel), 80mΩ (P-channel).
- Fast Switching: Optimized for high efficiency.
- Compact SO-8 Package: Saves board space.
### Applications:
- DC-DC converters
- Battery protection circuits
- Motor control
- Load switching
The IRF7342PBF offers high efficiency, thermal performance, and space-saving integration, making it a versatile choice for compact power designs.

Equivalent

Equivalent products to the IRF7342PBF (dual N+P-channel MOSFET) include:
- FDS8936A (Fairchild/ON Semi)
- SiA427DJ (Vishay)
- DMN2019LSN (Diodes Inc.)
- NTTFS4C10N (ON Semi)
These alternatives offer similar specifications (30V, ~3A) in SOIC-8 packages. Verify pin compatibility and electrical ratings for your application. For exact replacements, check parametric databases like Octopart or distributor listings.

Features

The IRF7342PBF is a dual N- and P-channel MOSFET in a single package, designed for power management applications. Key features:
- Voltage Ratings: 55V (N-channel) and 55V (P-channel).
- Current Ratings: 6.5A (N-channel) and 5.3A (P-channel).
- Low On-Resistance: 50mΩ (N-channel) and 85mΩ (P-channel) at 10V gate drive.
- Fast Switching: Optimized for high-efficiency applications.
- Package: 8-pin SOIC, compact and space-saving.
- Logic-Level Gate Drive: Compatible with 5V/10V drive signals.
- Applications: DC-DC converters, motor control, and power switching.
Offers efficient thermal performance and robust design for high-reliability systems.

Pinout

The IRF7342PBF is a dual N-channel and P-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Pins 1, 2, 3 (Source 1, Drain 1, Gate 1) – N-channel MOSFET.
2. Pins 5, 6, 7 (Source 2, Drain 2, Gate 2) – P-channel MOSFET.
3. Pins 4 & 8 – Not connected (NC).
Key Features:
- Voltage Rating: 55V (N-channel), -30V (P-channel).
- Current Rating: 6.5A (N-channel), -4.3A (P-channel).
- Low On-Resistance (RDS(on)): ~0.055Ω (N-channel), ~0.11Ω (P-channel).
Commonly used in power management, motor control, and switching applications.

Application

The IRF7342PBF, a dual N- and P-channel MOSFET, is commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits for small motors.
3. Switching Applications – Load switches, power distribution.
4. Portable Devices – Battery-powered systems for efficient power handling.
5. Automotive Electronics – Auxiliary power controls.
Its compact SOIC-8 package and efficient switching make it suitable for space-constrained, high-performance applications.

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