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IRF7240PBF
+NomenclatureMOSFET P-CH 40V 10.5A 8SO
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FabricantTechnologie Infineon
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Pièce fabricant #IRF7240PBF
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Fiche technique IRF7240PBF DataSheet
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Package SOIC-8
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En stock2318
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 10.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 15mOhm @ 10.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9250 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Présentation
Description
- Voltage Rating: -40V (drain-to-source)
- Current Rating: -12A (continuous drain current)
- Low On-Resistance: 60mΩ (max at VGS = -10V)
- Fast Switching: Optimized for high-speed performance
- Package: TO-220AB (through-hole, easy to mount)
Commonly used in DC-DC converters, motor control, and power management circuits, it offers reliable performance with low gate charge for reduced switching losses. The P-channel configuration simplifies high-side switching by allowing gate drive relative to ground.
Applications:
- Battery protection
- Load switching
- Power supplies
Its PBF suffix indicates lead-free (RoHS-compliant) construction. Always refer to the datasheet for detailed specs and thermal considerations.
Equivalent
- IRF7420PBF (Similar specs, P-channel)
- IRF7416PBF (Slightly lower current, P-channel)
- STP80PF55 (Higher current, P-channel)
- FQP27P06 (P-channel, 60V, 27A)
- SUD50P04-09L (P-channel, 40V, 50A)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 40V (Drain-Source, VDSS)
- Current Rating: 12A (Continuous Drain, ID)
- Low On-Resistance: 0.028Ω (RDS(on)) at VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Logic-Level Gate Drive: Fully enhanced at VGS = 4.5V
- Avalanche Energy Rated: Robust against inductive loads
- Package: TO-220AB (Through-Hole Mounting)
- Low Gate Charge (Qg): 18nC (typical) for efficient switching
Ideal for DC-DC converters, motor control, and power management applications.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- N-channel MOSFET
- VDS: 55V
- ID: 12A (continuous)
- RDS(on): 0.028Ω (max at VGS=10V)
- Logic-level gate drive (fully enhanced at 4.5V)
Applications: Power switching in DC-DC converters, motor control, and load switching.
Application
1. Power Management – Switching and regulation in DC-DC converters, voltage regulators.
2. Motor Control – Driving small motors in automotive, robotics, and industrial systems.
3. Load Switching – Power distribution in battery-operated devices, portable electronics.
4. Inverters & Converters – Used in power supply circuits and energy-efficient systems.
5. Automotive Applications – Electronic control units (ECUs), lighting, and infotainment systems.
Its low on-resistance (RDS(on)) and high current handling (up to 12A) make it suitable for efficient power switching in compact designs.
