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IRF7104PBF
+NomenclatureMOSFET 2P-CH 20V 2.3A 8-SOIC
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FabricantTechnologie Infineon
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Pièce fabricant #IRF7104PBF
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Fiche technique IRF7104PBF DataSheet
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Package SOIC-8
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En stock6055
365 Garantie qualité 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tube,Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 2.3A |
| RdsOn(Max)@IdVgs | 250mOhm @ 1A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 290pF @ 15V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |