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IRF640NPBF
+NomenclatureMOSFET N-CH 200V 18A TO220AB
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FabricantTechnologie Infineon
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Pièce fabricant #IRF640NPBF
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Fiche technique IRF640NPBF DataSheet
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Package TO-220AB
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 18A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 150mOhm @ 11A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 67 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1160 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Présentation
Equivalent
- IRF640 (original non-lead-free version)
- IRF640N (similar specs, different packaging)
- STP16NF06 (60V, 16A, lower voltage)
- IRF740 (400V, 10A, higher voltage)
- FQP18N20 (200V, 18A, TO-220 package)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 200V drain-to-source (VDSS)
- Current Rating: 18A continuous (ID)
- Low On-Resistance: 0.15Ω (RDS(on)) at VGS = 10V
- Fast Switching: Suitable for high-speed applications
- Power Handling: Up to 125W (TC = 25°C)
- Gate Threshold Voltage (VGS(th)): 2-4V
- Avalanche Rated: Robust against inductive spikes
- Package: TO-220AB (through-hole, easy mounting)
Commonly used in power supplies, motor control, and switching circuits.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Functions:
- Voltage Rating: 200V
- Current Rating: 18A (continuous)
- Low On-Resistance (RDS(on)): 0.15Ω (typical)
- Fast Switching – Suitable for power applications like motor drives, inverters, and DC-DC converters.
The TO-220AB package allows easy mounting on heatsinks for thermal management.