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IRF540NPBF
+NomenclatureMOSFET N-CH 100V 33A TO220AB
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FabricantTechnologie Infineon
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Pièce fabricant #IRF540NPBF
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Fiche technique IRF540NPBF DataSheet
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Package TO-220
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En stock7435
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 33A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 44mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 71 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1960 pF @ 25 V |
| PowerDissipation(Max) | 130W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Présentation
Description
The IRF540NPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is part of the HEXFET® family, produced by Infineon Technologies, previously by International Rectifier. The MOSFET is commonly used in power management, DC-DC converters, and motor control due to its robust performance characteristics.
Key features of the IRF540NPBF include:
- Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of 33A, making it suitable for medium to high-power applications.
- Low On-Resistance: The device has a low on-resistance (R_DS(on)) of about 44 mΩ, which minimizes conduction losses.
- Thermal Performance: It is housed in a TO-220 package, providing efficient heat dissipation for better thermal management.
The IRF540NPBF is widely used due to its reliability, ease of use, and availability, making it a versatile choice for engineers working on diverse electronic circuits.
Key features of the IRF540NPBF include:
- Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of 33A, making it suitable for medium to high-power applications.
- Low On-Resistance: The device has a low on-resistance (R_DS(on)) of about 44 mΩ, which minimizes conduction losses.
- Thermal Performance: It is housed in a TO-220 package, providing efficient heat dissipation for better thermal management.
The IRF540NPBF is widely used due to its reliability, ease of use, and availability, making it a versatile choice for engineers working on diverse electronic circuits.
Equivalent
The IRF540NPBF is an N-channel MOSFET commonly used in switching applications. Equivalent products include:
1. IRF540N
2. STP55NF06
3. FDP6030BL
4. FQP30N06L
5. NTE2990
These alternatives share similar voltage, current, and power ratings, making them suitable replacements in most applications. Always verify specifications against your specific requirements before substituting.
1. IRF540N
2. STP55NF06
3. FDP6030BL
4. FQP30N06L
5. NTE2990
These alternatives share similar voltage, current, and power ratings, making them suitable replacements in most applications. Always verify specifications against your specific requirements before substituting.
Features
The IRF540NPBF is an N-channel MOSFET that features efficient power handling, high-speed switching, and low on-resistance. Key characteristics include:
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of 33A.
2. On-Resistance: The MOSFET has a low on-resistance (R_DS(on)) of 44 milliohms, which minimizes power losses during operation.
3. Gate Threshold Voltage: Typically ranges from 2V to 4V, making it compatible with low-voltage gate drive circuits.
4. Power Dissipation: It can dissipate up to 150W, depending on the heat sinking provided.
5. Package Type: Comes in a TO-220 package, which offers good thermal performance and easy handling.
6. Applications: Suitable for applications such as motor drives, power supplies, and DC-DC converters due to its fast switching and robust design.
The IRF540NPBF is RoHS compliant, making it an environmentally friendly choice for various electronic projects.
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of 33A.
2. On-Resistance: The MOSFET has a low on-resistance (R_DS(on)) of 44 milliohms, which minimizes power losses during operation.
3. Gate Threshold Voltage: Typically ranges from 2V to 4V, making it compatible with low-voltage gate drive circuits.
4. Power Dissipation: It can dissipate up to 150W, depending on the heat sinking provided.
5. Package Type: Comes in a TO-220 package, which offers good thermal performance and easy handling.
6. Applications: Suitable for applications such as motor drives, power supplies, and DC-DC converters due to its fast switching and robust design.
The IRF540NPBF is RoHS compliant, making it an environmentally friendly choice for various electronic projects.
Pinout
The IRF540NPBF is an N-channel MOSFET transistor commonly used for switching and amplification purposes. It comes in a TO-220 package and typically has three pins:
1. Gate (G): The gate pin is used to control the MOSFET. It receives the input signal that determines whether the MOSFET is on or off. Applying a voltage to the gate creates an electric field that turns the device on, allowing current to flow between the drain and source.
2. Drain (D): The drain pin is the terminal where the load is connected. It is the output side of the MOSFET where the current flows out when the MOSFET is turned on.
3. Source (S): The source pin is connected to the ground or the negative side of the power supply. It is the terminal through which the current enters the MOSFET when the device is on.
The IRF540NPBF is often used in applications such as motor drivers, power supplies, and other electronic switching circuits due to its ability to handle significant power levels.
1. Gate (G): The gate pin is used to control the MOSFET. It receives the input signal that determines whether the MOSFET is on or off. Applying a voltage to the gate creates an electric field that turns the device on, allowing current to flow between the drain and source.
2. Drain (D): The drain pin is the terminal where the load is connected. It is the output side of the MOSFET where the current flows out when the MOSFET is turned on.
3. Source (S): The source pin is connected to the ground or the negative side of the power supply. It is the terminal through which the current enters the MOSFET when the device is on.
The IRF540NPBF is often used in applications such as motor drivers, power supplies, and other electronic switching circuits due to its ability to handle significant power levels.
Manufacturer
The IRF540NPBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company known for designing, developing, manufacturing, and marketing a broad range of semiconductor solutions. They focus on automotive, industrial power control, power management, and digital security solutions. Infineon's products serve various applications, including automotive electronics, industrial electronics, chip card, and security applications. The company is renowned for its innovation and commitment to quality, playing a significant role in shaping the semiconductor industry.
Application
The IRF540NPBF is a N-channel MOSFET commonly used in various applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Power Supply Units: Used for switching and regulation in DC-DC converters and power inverters.
2. Motor Control: Efficiently drives motors in applications requiring high current and fast switching.
3. Automotive Systems: Employed in electric vehicle charging stations and automotive electronics for robust performance.
4. Lighting Control: Utilized in LED and other lighting systems for dimming and switching.
5. Audio Amplifiers: Acts as a switch in Class D audio amplifiers for better sound quality and efficiency.
6. Consumer Electronics: Used in various household appliances for energy-efficient operation.
These applications leverage the MOSFET’s high-current and voltage handling capabilities.
1. Power Supply Units: Used for switching and regulation in DC-DC converters and power inverters.
2. Motor Control: Efficiently drives motors in applications requiring high current and fast switching.
3. Automotive Systems: Employed in electric vehicle charging stations and automotive electronics for robust performance.
4. Lighting Control: Utilized in LED and other lighting systems for dimming and switching.
5. Audio Amplifiers: Acts as a switch in Class D audio amplifiers for better sound quality and efficiency.
6. Consumer Electronics: Used in various household appliances for energy-efficient operation.
These applications leverage the MOSFET’s high-current and voltage handling capabilities.
Package
The IRF540NPBF is a TO-220 package, which is a standard through-hole package type used for power transistors and similar components. It features three leads and a metal tab for mounting and heat dissipation.
