IRF5210STRLPBF

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IRF5210STRLPBF

+Nomenclature

MOSFET P-CH 100V 38A D2PAK

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 38A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 60mOhm @ 38A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 230 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2780 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK

Présentation

Description

The IRF5210STRLPBF is a P-channel Power MOSFET from Infineon, designed for high-efficiency power management applications.
Key Features:
- Voltage Rating: -100V (Drain-Source)
- Current Rating: -10A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 0.27Ω (max) @ VGS = -10V
- Fast Switching: Optimized for high-speed performance
- Package: TO-252 (DPAK), surface-mountable
Applications:
- DC-DC converters
- Motor control
- Power switching circuits
- Battery management
Advantages:
- High voltage tolerance
- Low power dissipation
- Compact, industry-standard package
This MOSFET is suitable for medium-power switching where efficiency and thermal performance are critical. Always refer to the datasheet for detailed specifications.

Equivalent

Equivalent products to the IRF5210STRLPBF (P-channel MOSFET, 100V, 24A) include:
- IRF4905 (55V, 74A)
- IRF9Z34N (55V, 19A)
- FQP27P06 (60V, 27A)
- STP80PF55 (55V, 80A)
Check voltage/current ratings and package compatibility before substitution. For exact equivalents, consider IRF5210PBF (same specs, different package). Always verify datasheets.

Pinout

The IRF5210STRLPBF is a P-channel power MOSFET in a TO-263 (D2PAK) package with 3 pins (Gate, Drain, Source).
Key Features:
- Voltage Rating: -100V
- Current Rating: -24A (continuous)
- Low On-Resistance (RDS(on)): 0.06Ω (max at VGS = -10V)
- Gate Threshold (VGS(th)): -2V to -4V
Pin Functions:
1. Gate (G): Controls conduction.
2. Drain (D): Connects to load (negative side for P-channel).
3. Source (S): Connects to power supply (negative rail).
Designed for high-power switching in applications like motor control, power supplies, and inverters.

Application

The IRF5210STRLPBF, a P-channel MOSFET, is commonly used in:
1. Power Management – Switching and regulation in DC-DC converters, voltage regulators.
2. Motor Control – Driving motors in automotive, robotics, and industrial systems.
3. Battery Protection – Reverse polarity protection and load switching in portable devices.
4. Load Switching – High-side switching in power distribution circuits.
5. Automotive Systems – Electronic control units (ECUs), lighting, and infotainment.
Its low on-resistance (RDS(on)) and high current handling (up to 42A) make it suitable for efficient power control in compact designs.

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