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IRF200P223
+NomenclatureMOSFET N-CH 200V 100A TO247AC
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FabricantTechnologie Infineon
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Pièce fabricant #IRF200P223
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Fiche technique IRF200P223 DataSheet
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En stock28315
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Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 11.5mOhm @ 60A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 270µA |
| Gate Charge(Qg)(Max) @ Vgs | 102 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5094 pF @ 50 V |
| Power Dissipation (Max) | 313W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
Présentation
Description
The IRF200P223 is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching and amplification in electronic circuits. This component is typically used in applications requiring high-speed switching and energy efficiency, such as power supplies, motor drives, and inverters.
Key features of the IRF200P223 may include a high current carrying capability, low on-state resistance, and the ability to handle significant power loads, making it suitable for high-frequency applications. It likely operates at a specific voltage and current rating, ensuring that it can be effectively integrated into various circuit designs.
The device would also be characterized by its thermal performance, allowing it to dissipate heat efficiently, thus ensuring reliability and longevity in demanding environments. Proper usage typically requires adherence to specified electrical parameters to prevent damage and ensure optimal performance. Always refer to the datasheet for detailed specifications and application guidelines specific to this MOSFET.
Key features of the IRF200P223 may include a high current carrying capability, low on-state resistance, and the ability to handle significant power loads, making it suitable for high-frequency applications. It likely operates at a specific voltage and current rating, ensuring that it can be effectively integrated into various circuit designs.
The device would also be characterized by its thermal performance, allowing it to dissipate heat efficiently, thus ensuring reliability and longevity in demanding environments. Proper usage typically requires adherence to specified electrical parameters to prevent damage and ensure optimal performance. Always refer to the datasheet for detailed specifications and application guidelines specific to this MOSFET.
Equivalent
The IRF200P223 is a specific MOSFET chip from International Rectifier. Equivalent products would depend on the specifications such as voltage, current, and package type. Possible equivalent MOSFETs could include those from manufacturers like Infineon, STMicroelectronics, or ON Semiconductor with similar specifications. For precise equivalents, consider parameters like on-resistance, max drain current, and breakdown voltage. Always compare datasheets to ensure compatibility. If exact equivalents are needed, consulting with a distributor or using a semiconductor cross-reference tool is recommended.
Features
The IRF200P223 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency in switching applications. Here are some key features:
1. Voltage and Current Ratings: Typically designed for high-voltage applications, it can handle significant current loads without compromising performance.
2. Low On-Resistance: Features low on-state resistance, which reduces power loss and increases overall efficiency when the transistor is in the conducting state.
3. Fast Switching Speeds: Capable of rapid switching, making it ideal for high-frequency applications and minimizing delay times in circuit operations.
4. Thermal Performance: Includes efficient thermal management to dissipate heat effectively, ensuring reliability and longevity in operation.
5. Robust Design: Incorporates features that protect against over-voltage, over-current, and thermal overload, enhancing durability.
6. Package Type: Available in standard packaging for easy integration onto printed circuit boards (PCBs).
These features make the IRF200P223 suitable for a variety of applications, including power supplies, motor drives, and other industrial and consumer electronics requiring reliable and efficient power management.
1. Voltage and Current Ratings: Typically designed for high-voltage applications, it can handle significant current loads without compromising performance.
2. Low On-Resistance: Features low on-state resistance, which reduces power loss and increases overall efficiency when the transistor is in the conducting state.
3. Fast Switching Speeds: Capable of rapid switching, making it ideal for high-frequency applications and minimizing delay times in circuit operations.
4. Thermal Performance: Includes efficient thermal management to dissipate heat effectively, ensuring reliability and longevity in operation.
5. Robust Design: Incorporates features that protect against over-voltage, over-current, and thermal overload, enhancing durability.
6. Package Type: Available in standard packaging for easy integration onto printed circuit boards (PCBs).
These features make the IRF200P223 suitable for a variety of applications, including power supplies, motor drives, and other industrial and consumer electronics requiring reliable and efficient power management.
Manufacturer
The IRF200P223 is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in a wide range of electronic components and systems. It is known for producing semiconductors for automotive, industrial, cybersecurity, and Internet of Things (IoT) applications. The company focuses on innovation and efficiency, providing advanced solutions in areas such as power management, energy efficiency, and smart technologies. Infineon is a key player in the global semiconductor industry, with a strong emphasis on sustainability and reliable technology solutions.
Application
The IRF200P223 is a power MOSFET designed for a variety of applications where efficient switching and power control are critical. Key areas include:
1. Power Supply Units: Used in switched-mode power supplies for high efficiency.
2. Motor Drives: Suitable for controlling motors in industrial and consumer electronics.
3. Inverters: Utilized in solar inverters and UPS systems for converting DC to AC.
4. Automotive Systems: Employed in electric vehicle power management and automotive lighting.
5. DC-DC Converters: Facilitates voltage regulation in compact power management solutions.
6. Load Switching: Effective for switching high-current loads in various electronic circuits.
Its high current capacity and low on-resistance make it ideal for these applications.
1. Power Supply Units: Used in switched-mode power supplies for high efficiency.
2. Motor Drives: Suitable for controlling motors in industrial and consumer electronics.
3. Inverters: Utilized in solar inverters and UPS systems for converting DC to AC.
4. Automotive Systems: Employed in electric vehicle power management and automotive lighting.
5. DC-DC Converters: Facilitates voltage regulation in compact power management solutions.
6. Load Switching: Effective for switching high-current loads in various electronic circuits.
Its high current capacity and low on-resistance make it ideal for these applications.
Package
The IRF200P223 is a power MOSFET that comes in a TO-220 package type. The TO-220 is a widely used package for power semiconductors, featuring a metal tab for heat dissipation and three leads for electrical connections.
