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IR21531S
+NomenclatureIC GATE DRVR HALF-BRIDGE 8SOIC
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FabricantTechnologie Infineon
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Pièce fabricant #IR21531S
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Fiche technique IR21531S DataSheet
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Package SOIC-8
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En stock1973
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 10V ~ 15.6V |
| InputType | RC Input Circuit |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 80ns, 45ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Présentation
Description
Students can expect to engage with various case studies and current events to apply theoretical knowledge to real-world scenarios. The course aims to develop critical thinking, analytical skills, and an understanding of the complex dynamics that shape international affairs. Assignments might include essays, presentations, and discussions to encourage active participation and deeper comprehension.
Overall, "Introduction to IR21531S" serves as a stepping stone for students pursuing further studies in international relations or related fields, equipping them with the necessary tools to analyze and interpret global issues.
Equivalent
1. FAN7382 by ON Semiconductor
2. L6384 by STMicroelectronics
3. UCC27714 by Texas Instruments
4. FAN73832 by Fairchild Semiconductor (now part of ON Semiconductor)
5. IRS2153D by Infineon Technologies
Ensure compatibility with your specific application by comparing specifications and features before substituting.
Features
1. High-Voltage Capability: Can handle up to 600V, making it suitable for high-power applications.
2. Floating Channel: Capable of operating up to 600V, providing isolation between input and output for safer operation.
3. Gate Driver: Offers gate drive supply range from 10V to 20V, suitable for driving power MOSFETs and IGBTs efficiently.
4. Dead-Time Control: Includes adjustable and precise dead-time control to prevent shoot-through and enhance reliability.
5. Under-Voltage Lockout (UVLO): Integrated UVLO for both high-side and low-side outputs to ensure proper operation and prevent malfunction.
6. Programmable Oscillator: Allows frequency setting for the internal oscillator, providing flexibility in design.
7. Integrated Bootstrap Diode: Simplifies the circuit design and improves performance by reducing external component count.
8. Protection Features: Incorporates fault conditions protection, enhancing the overall durability of the device.
These features make the IR21531S suitable for use in a variety of applications such as motor drives, power supplies, and lighting ballasts.
Pinout
The IR21531S comes in an 8-pin SOIC package. Here is a concise description of its pin functions:
1. VCC: Supply voltage input.
2. COM: Common ground reference for the IC.
3. LO: Low-side gate drive output.
4. NC: No connection (internally not connected).
5. HO: High-side gate drive output.
6. VB: High-side floating supply voltage.
7. VS: High-side floating supply return.
8. VDD: Logic supply voltage input.
This pin configuration allows the IR21531S to efficiently drive power devices, offering capabilities such as dead-time insertion, under-voltage lockout, and protection features that enhance system performance and reliability. Keep in mind that due to the technical nature of such components, consulting the official datasheet is recommended for detailed applications and specifications.
Manufacturer
Application
1. Motor Drives: It drives high-voltage gate drivers for brushless DC motors and AC motors.
2. Power Supplies: Utilized in switch-mode power supplies (SMPS) for AC-DC and DC-DC conversion.
3. Lighting Systems: Used in electronic ballasts for fluorescent and LED lighting.
4. Inverters: Suitable for solar inverters and uninterrupted power supplies (UPS).
5. Induction Heating: Drives circuits in induction cookers and industrial heating applications.
These applications leverage the IR21531S for its ability to efficiently control power devices in high-voltage environments.