IR2110PBF

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IR2110PBF

+Nomenclature

IC GATE DRVR HALF-BRIDGE 14DIP

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Spécifications

Attribut Valeur
Package Tube
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 3.3V ~ 20V
LogicVoltage-VILVIH 6V, 9.5V
Current-PeakOutput(SourceSink) 2A, 2A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 500 V
Rise/FallTime(Typ) 25ns, 17ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case 14-DIP (0.300, 7.62mm)

Présentation

Description

The IR2110PBF is a high-voltage, high-speed power MOSFET and IGBT driver designed to drive N-channel power MOSFETs or IGBTs in a half-bridge configuration. Manufactured by Infineon Technologies, this integrated circuit is widely used in applications such as motor drives, lighting, and renewable energy systems due to its robust performance and reliability.
Key features of the IR2110PBF include:
1. High Voltage Tolerance: It can handle up to 600V, making it suitable for high-voltage applications.
2. Floating Channel: Allows for a high-side gate drive capable of switching up to 600V.
3. High-Speed Operation: Provides fast switching speeds with propagation delays typically less than 120ns.
4. Under-Voltage Lockout (UVLO): Protects the system by ensuring the gate drive voltage is sufficient before enabling the output.
5. Bootstrap Capability: Simplifies high-side driving, reducing the need for additional components.
The IR2110PBF's versatility and efficiency make it an essential component for designers looking to optimize power management in various electronic systems.

Equivalent

The IR2110PBF is a high-voltage, high-speed power MOSFET and IGBT driver. Equivalent products include the IR2113 IR2112, L6384, and FAN7382, among others. These alternatives often have similar pin configurations and electrical characteristics, but always check the datasheet to ensure compatibility with your specific application.

Features

The IR2110PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Key features include:
1. Floating Channel Capability: It can drive high-side devices up to 500V.
2. High Output Current: Provides 2A peak source and 2A peak sink drive current.
3. Propagation Delay: Features a matched propagation delay for high and low side outputs to minimize timing errors.
4. Undervoltage Lockout Protection: Ensures stability and protects the circuit by shutting down the device if the supply voltage is too low.
5. Logic Input Compatibility: Compatible with standard CMOS or LSTTL outputs with a logic “high” input threshold.
6. Bootstrap Operation: Utilizes a bootstrap circuit to maintain operation without the need for a separate floating supply.
7. Tolerant to Negative Transients: Withstands dV/dt up to 50V/ns.
8. Operating Temperature Range: Works efficiently in a wide temperature range from -40°C to 125°C.
These features make the IR2110PBF suitable for high-efficiency switching power supplies, motor drives, and other high-voltage applications.

Pinout

The IR2110PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is commonly used in motor control applications and power supply designs. The IR2110PBF comes in a 14-pin package, typically a dual in-line package (DIP) or a small outline integrated circuit (SOIC).
Here is a brief overview of its pin functions:
1. VCC: Logic supply voltage.
2. VB: High-side floating supply voltage.
3. VS: High-side floating supply return.
4. IN: Logic input for high and low side gate driver outputs.
5. HIN: Logic input for high side gate driver output.
6. LIN: Logic input for low side gate driver output.
7. COM: Logic ground.
8. HO: High-side gate drive output.
9. LO: Low-side gate drive output.
10. VSS: Negative supply terminal (commonly tied to COM).
11. VIN: Logic input voltage.
12. NC: No connection (may vary by manufacturer).
13. NC: No connection (may vary by manufacturer).
14. NC: No connection (may vary by manufacturer).
These pins enable the IR2110PBF to drive high-power MOSFETs and IGBTs effectively for robust switching applications.

Manufacturer

The IR2110PBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company that specializes in a wide range of electronic components used in various applications including automotive, industrial, and consumer electronics. The company was originally a part of Siemens AG and became independent in 1999. Infineon is known for its innovative solutions in power semiconductors, microcontrollers, sensors, and security solutions. The IR2110PBF, specifically, is a high voltage, high-speed power MOSFET and IGBT driver that is used in power management applications.

Application

The IR2110PBF is a high-voltage, high-speed power MOSFET and IGBT driver designed for applications requiring efficient motor control, power conversion, and inverter circuits. Common application areas include motor drives, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, and industrial equipment. Its ability to drive both high-side and low-side switches makes it suitable for half-bridge and full-bridge configurations. The IR2110PBF is used in applications requiring isolation between input and output stages, robust gate drive capabilities, and fast switching performance. It is ideal for environments where precise control and reliability are essential.

Package

The IR2110PBF is typically available in a 14-pin dual in-line package (DIP) and a 14-pin small outline integrated circuit (SOIC) package. These packages are designed for easy integration into printed circuit boards (PCBs) and are commonly used for high-voltage, high-speed power MOSFET and IGBT drivers.

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